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STMicroelectronics Darlington Transistor NPN 8A 100V TO-252 Surface Mount 3-Pin MJD122T4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | MJD122T4 |
| Mount Type | Surface |
| Series | MJD122 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 8A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 0.01mA |
| Maximum Power Dissipation Pd | 20W |
| STMicroelectronics 1 Darlington Transistor NPN, 8 A 100 V HFE | 100, 3-Pin DPAK |
Key Features
- This Darlington transistor features a maximum power dissipation of 20W.
- It includes a minimum DC current gain (hFE) of 100 for high amplification.
- The transistor polarity is NPN with a 3-pin configuration.
- It sustains an operating temperature range from -65°C to 150°C, suitable for harsh environments.
- The package type is TO-252 designed for surface mounting on PCBs.
- The device has a maximum emitter base voltage (VEBO) of 5V and collector emitter saturation voltage (VceSAT) of 2V.
- It complies with typical industry standards though has no specific automotive approvals.
- This transistor is ideal for power amplification and switching applications in industrial and consumer electronics.
Product Description
STMicroelectronics MJD122T4 is an NPN Darlington transistor delivering high current and voltage capabilities with a maximum collector current of 8A and collector emitter voltage of 100V. Housed in a TO-252 surface mount package with 3 pins, it is suitable for robust electronic applications requiring reliable power amplification.
The transistor exhibits a minimum DC current gain (hFE) of 100, providing strong signal amplification for switching and linear functions. It can dissipate up to 20W of power, supporting demanding loads in industrial circuits.
The operating temperature range from -65°C to 150°C enables usage in diverse environmental conditions, including automotive and heavy machinery electronics, despite no explicit automotive standard certification.
With a compact height of 2.4mm and length of 6.6mm, the device suits compact PCB layouts. Its maximum emitter base voltage is 5V, and the collector emitter saturation voltage is well controlled at 2V for efficient switching.
The STMicroelectronics MJD122T4 is a reliable choice for designers working on power control, motor drivers, and other applications requiring high gain and current handling in a surface mount form factor.
This Darlington Transistor features a maximum power dissipation of 20W. It includes a minimum DC current gain (hFE) of 100 for high amplification. The transistor polarity is NPN with a 3-pin configuration. It sustains an operating temperature range from -65°C to 150°C, suitable for harsh environments.
The package type is TO-252 designed for surface mounting on PCBs. The device has a maximum emitter base voltage (VEBO) of 5V and collector emitter saturation voltage (VceSAT) of 2V. Length and height dimensions are 6.6mm and 2.4mm respectively, enabling compact designs.
It complies with typical industry standards though has no specific automotive approvals. This transistor is ideal for power amplification and switching applications in industrial and consumer electronics. Explore more power and discrete semiconductor components by STMicroelectronics at EnvMart for your industrial, automotive, and consumer electronic designs.
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Frequently Asked Questions
The maximum continuous collector current for this model is 8A.
This model is housed in a TO-252 surface mount package.
It can operate within a temperature range of -65°C to 150°C.
The minimum DC current gain (hFE) for this transistor is 100.
This transistor has a maximum power dissipation of 20W.
The dimensions are 6.6mm in length and 2.4mm in height.
The collector-emitter saturation voltage (VceSAT) is 2V.
The maximum emitter-base voltage (VEBO) is 5V.
This model is an NPN Darlington transistor.
It is suitable for power amplification and switching applications in industrial and consumer electronics.
The MJD122T4 has a 3-pin configuration.
The country of origin for this transistor is India.
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