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onsemi QFET N-Channel Enhancement MOSFET, 8 A, 800 V, 3-Pin TO-220 Package FQP8N80C
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.4mm |
| Length | 10.1mm |
| Model | FQP8N80C |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 1.55Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 178W |
| Typical Gate Charge Qg @ Vgs | 35nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
Key Features
- High voltage rating of 800 volts ensures suitability for demanding power applications.
- Maximum continuous drain current of 8 amperes supports substantial load currents.
- Low on-resistance of 1.55 ohms reduces conduction losses.
- Enhancement mode channel provides efficient switching characteristics.
- Typical gate charge of 35 nC minimizes switching losses.
- Max power dissipation of 178 watts for reliable thermal performance.
- Operates within a temperature range from -55°C to 150°C for industrial environments.
- Compact TO-220 through-hole mounting aids in heat dissipation and easy PCB installation.
Product Description
onsemi FQP8N80C is a QFET N-Channel MOSFET designed to deliver high efficiency and robust performance in power Semiconductor applications. With a continuous drain current rating of 8 amperes and a maximum drain-source voltage of 800 volts, this device is ideal for power supplies, switching regulators, motor control, and other industrial electronics requiring reliable high-voltage switching capability.
The device features a TO-220 package with through-hole mount type, providing excellent thermal dissipation and straightforward mounting on printed circuit boards. Its enhancement mode channel allows for efficient control in both switching and amplification tasks.
Key electrical characteristics include a maximum drain-source resistance (Rds) of 1.55 ohms, typical gate charge of 35 nC at gate-source voltage, and a forward voltage of 1.4 volts. The MOSFET supports operation in demanding thermal and electrical conditions, with a maximum power dissipation of 178 watts and operating temperatures ranging from -55°C to 150°C.
This MOSFET is widely used in industrial, manufacturing, power management, and motion control applications. It offers reduced on-state loss and switching loss, contributing to enhanced system efficiency. The advanced QFET planar technology also improves the device's figure of merit compared to competing planar MOSFETs, making it suitable for high-performance power electronics.
High voltage rating of 800 V suitable for power supply and motor control applications. Continuous drain current capacity of 8 A allows for substantial power handling. Low Rds(on) of 1.55 Ω helps reduce conduction losses.
Enhancement mode operation ensures efficient switching. Compact TO-220 package allows effective heat dissipation. Temperature operating range from -55°C to 150°C supports tough environments. Gate charge optimized for switching efficiency.
Reliable forward voltage and power dissipation specifications ensure durability. Three-pin design simplifies integration into circuits. Explore the Electronics & Electricals category at EnvMart for additional MOSFETs and power components suitable for your industrial and electronic applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8 amperes.
The maximum drain-source voltage rating is 800 volts, making it suitable for high-voltage applications.
The on-resistance (Rds) of the FQP8N80C is 1.55 ohms, which helps in reducing conduction losses.
The typical gate charge for the FQP8N80C is 35 nC, which minimizes switching losses.
This model can dissipate a maximum power of 178 watts, ensuring reliable thermal performance.
The FQP8N80C operates within a temperature range from -55°C to 150°C, suitable for industrial environments.
It comes in a TO-220 package type, which allows for through-hole mounting and effective heat dissipation.
The FQP8N80C features a 3-pin design, simplifying integration into circuits.
This model is an N-channel enhancement mode MOSFET, providing efficient control in switching applications.
The forward voltage for this model is 1.4 volts, which is a key specification for its operation.
It is widely used in power supplies, switching regulators, motor control, and other industrial electronics requiring high-voltage switching capability.
The maximum gate-source voltage for this model is -30 to +30 volts, which is important for safe operation.
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