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onsemi NDT Type P-Channel Enhancement MOSFET, 5 A, 30 V, 4-Pin SOT-223 Package NDT452AP
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.6mm |
| Length | 6.5mm |
| Model | NDT452AP |
| Width | 3.56mm |
| Mount Type | Surface |
| Series | NDT |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 4 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- High-density DMOS technology minimizes on-state resistance for rugged and reliable operation.
- Maximum continuous drain current of 5 amperes and maximum drain-source voltage of 30 volts.
- Surface mount package type SOT-223 with 4 pins for compact PCB integration.
- Supports enhancement mode operation with maximum gate-source voltage of ±20 V.
- Low typical gate charge of 22 nC allows fast switching and efficient energy use.
- Maximum power dissipation of 3 watts and operating temperature range from -65°C to 150°C.
- Applications include DC/DC converters, battery protection, power management, and DC motor control.
Product Description
onsemi NDT452AP is a P-Channel Enhancement MOSFET designed for reliable and efficient power switching in industrial and commercial electronic systems. Featuring a maximum continuous drain current of 5 A and a drain-source voltage rating of 30 V, this 4-pin device packaged in SOT-223 is ideal for compact power management board designs.
Manufactured with onsemi's proprietary high-density DMOS technology, the NDT452AP provides low on-resistance (65 mΩ) for minimal conduction losses and fast switching capability with a gate charge of only 22 nC. The device can operate across a wide temperature range from -65°C to 150°C, making it suitable for rugged environments.
This MOSFET’s 4-pin surface mount package enables easy integration onto printed circuit boards for applications requiring reliable switching such as load switching, DC/DC converters, battery protection circuits, power management control, and DC motor control.
Key electrical specifications include a maximum gate-source voltage of ±20 volts and a forward voltage of -1.2 V. The component’s compact dimensions of 6.5 mm length, 3.56 mm width, and 1.6 mm height contribute to its suitability for space-constrained designs.
This product is ideal for use in industrial, automotive control systems, consumer electronics, and communication equipment, providing efficiency and durability in power control functions.
Voltage controlled P-Channel small signal MOSFET suitable for load switching applications. High-density DMOS technology minimizes on resistance for reliable performance. Supports enhancement mode operation with low gate charge for fast switching.
Operating temperature range from -65°C to 150°C ensuring rugged performance. Compact 4-pin SOT-223 package suitable for surface mount PCB layouts. Applications include DC/DC converters, battery protection, motor control, and power management.
Explore more Semiconductor and MOSFET products by onsemi on EnvMart for advanced electronic designs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 5 A.
The maximum drain-source voltage rating for the NDT452AP is 30 V.
The typical gate charge for this model is 22 nC, allowing for fast switching.
This model is packaged in a SOT-223 type, which is suitable for surface mounting.
The operating temperature range for this MOSFET is from -65°C to 150°C.
The dimensions of this model are 6.5 mm in length, 3.56 mm in width, and 1.6 mm in height.
The maximum power dissipation for this MOSFET is 3 W.
The forward voltage for this model is -1.2 V.
The maximum gate-source voltage for this MOSFET is ±20 V.
The NDT452AP is a P-Channel Enhancement MOSFET.
This model is suitable for applications such as DC/DC converters, battery protection, power management, and DC motor control.
The maximum drain-source resistance for this model is 65 mΩ, minimizing conduction losses.
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