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| Country of Origin | India |
|---|---|
| Brand | Taiwan Semiconductor |
| Height | 2.42mm |
| Length | 7.11mm |
| Model | ES3D |
| Width | 6.22mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-214AA |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A |
| Maximum Forward Voltage Vf | 950mV |
| Peak Reverse Recovery Time trr | 35ns |
| Maximum Forward Current If | 3A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 200V |
Taiwan Semiconductor ES3D is a Silicon Junction Rectifier Diode designed for power electronic applications requiring reliable switching up to 3 amperes forward current at 200 volts maximum peak reverse voltage. The diode features a surface mount DO-214AA package with a two-pin configuration, enabling compact, efficient placement on printed circuit boards.
This component offers fast switching capabilities with a peak reverse recovery time of 35 nanoseconds, making it well-suited for circuits operating at high frequencies. Its maximum forward voltage drop is 950 millivolts, contributing to reduced power losses and improved energy efficiency.
The ES3D diode withstands harsh operating conditions, with a temperature range from -55°C to 150°C, supporting industrial and commercial applications. It also includes a robust surge current capacity, handling non-repetitive forward surges of up to 100 amperes, enhancing circuit protection during transient events.
With compact dimensions - 7.11 mm in length, 6.22 mm in width, and 2.42 mm in height - it fits well in space-restricted designs. This diode is frequently used in power management circuits, switching power supplies, and rectifier circuits across industrial electronics, automotive systems, and consumer electronics.
The diode utilizes silicon junction technology for efficient rectification. Surface mount design in DO-214AA package ensures easy PCB integration. Maximum forward current is rated at 3 amperes for robust performance. Maximum peak reverse voltage withstands up to 200 volts.
The device features a two-pin configuration suitable for power applications. Peak reverse recovery time measures at 35 nanoseconds, supporting high-speed switching. Operates reliably between temperatures of -55°C and 150°C.
Maximum forward voltage drop is 950 millivolts to optimize power efficiency. Can withstand peak non-repetitive forward surge current up to 100 amperes. Compact dimensions: length 7.11 mm, width 6.22 mm, and height 2.42 mm for space-constrained applications.
This Taiwan Semiconductor ES3D silicon junction diode is essential for electronics manufacturers and engineers seeking reliable, high-performance switching diodes for use in industrial, laboratory, automotive, and commercial electronics applications. Explore and select suitable semiconductor components with EnvMart's comprehensive catalog.
Explore more products in our Semiconductor Diodes category.
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