onsemi NPN Transistor 1.5 A 45 V 3-Pin TO-225 Through Hole BD135G

onsemi BD135G is a general-purpose NPN bipolar transistor suitable for a range of electronic construction, industrial automation, and laboratory applications. With a maximum DC collector current of 1.5 A and a collector-emitter voltage rating of 45 V, it efficiently manages moderate power switching and amplification tasks.

Housed in a TO-225 package with 3 pins and through-hole mounting, the transistor supports standard PCB assembly methods. Its maximum power dissipation of 1.25 W allows reliable functioning under continuous load conditions.

The BD135G features a minimum DC current gain (hFE) of 25 which makes it well suited for signal amplification in control and switching circuits. It operates over a broad temperature range from -55°C to 150°C, ensuring durability in diverse industrial environments.

Physical dimensions - length 27.73 mm, width 7.8 mm, and height 3 mm - allow integration in compact electronic modules. The maximum collector-base voltage and emitter-base voltage ratings are 45 V and 5 V respectively, enhancing its compatibility with various power circuits.

This transistor is designed as a single, discrete bipolar NPN device, manufactured in China. It does not carry specific automotive industry certifications but is compliant with standard semiconductor quality requirements.

This product serves industrial, electronic design, manufacturing, and repair needs reliably. Applications include general switching, amplification in low to medium power circuits, and educational projects. The device complements circuit boards requiring a robust, small footprint power transistor.

Ideal for prototyping and commercial electronic equipment requiring dependable NPN transistor performance. Explore the complete range of bipolar transistors and power Semiconductors on EnvMart's Electronics & Electricals category to find components fitting your project specifications.