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Infineon HEXFET N-Channel MOSFET, 18 A, 200 V Enhancement Mode, TO-220 Package, 3-Pin IRF640NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.67mm |
| Model | IRF640NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 150mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 67nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| N-channel MOSFET,IRF640N 18A 200VBrand | International Rectifier |
Key Features
- Supports high-efficiency switching applications with low on-resistance.
- Continuous drain current rating of 18 A for robust power handling.
- Maximum drain-source voltage of 200 V suitable for various industrial uses.
- TO-220 through-hole mounting package for effective heat dissipation.
- Enhancement mode N-channel MOSFET with 150 W power dissipation capability.
- Wide operating temperature range from -55°C to +175°C ensures reliable performance.
- Maximum gate-source voltage of ±20 V for safe switching operations.
- Fully avalanche rated providing robustness against voltage spikes.
Product Description
Infineon IRF640NPBF is a HEXFET N-Channel MOSFET designed for high-efficiency power switching applications in industrial and commercial electronic systems. This device features an 18 A continuous drain current and a maximum drain-source voltage of 200 V, making it suitable for power management in automation, motor control, and renewable energy systems.
The device utilizes an enhancement mode channel configuration with a TO-220 through-hole mounting package, facilitating effective heat dissipation. The MOSFET operates efficiently with a maximum power dissipation of 150 W and a low on-resistance of 150 mΩ, minimizing energy loss during operation.
It supports a wide operating temperature range from -55°C to +175°C, allowing use in diverse thermal environments without degradation in performance. The maximum gate-source voltage rating of ±20 V ensures safe and reliable switching, while the fully avalanche rated design provides durability against transient voltage spikes.
Typical applications include power supply circuits in industrial automation, motor control for robotics, renewable energy inverters such as solar systems, power switching equipment, and audio amplification stages.
High-efficiency IRF640NPBF MOSFET with 18 A continuous current rating. 200 V maximum drain-source voltage suitable for versatile power applications. Robust TO-220 through-hole package for improved thermal management. Low on-resistance of 150 mΩ to reduce power dissipation.
Wide operational temperature range from -55°C to 175°C. Gate-source voltage tolerance of ±20 V for safe switching. Fully avalanche rated for enhanced safety against voltage spikes.
This Infineon Semiconductor component is ideal for industrial, laboratory, manufacturing, HVAC, and commercial electronic power management applications. Explore more MOSFET products on EnvMart for comprehensive electronic component solutions.
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Frequently Asked Questions
The maximum continuous drain current rating of this model is 18 A.
This MOSFET has a maximum drain-source voltage of 200 V.
It comes in a TO-220 package type, which is suitable for through-hole mounting.
The maximum drain-source resistance (Rds) is 150 mΩ, which helps minimize energy loss during operation.
This model operates within a wide temperature range from -55°C to +175°C.
The maximum power dissipation capability is 150 W, allowing for robust power handling.
The maximum gate-source voltage rating is ±20 V, ensuring safe switching operations.
This model is suitable for power management in automation, motor control, renewable energy systems, and audio amplification stages.
The TO-220 package has a pin count of 3.
The typical gate charge (Qg) at Vgs is 67 nC.
Yes, this MOSFET is fully avalanche rated, providing robustness against voltage spikes.
The country of origin for this model is India.
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