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Nexperia Low Saturation Voltage 1 A NPN Bipolar Junction Transistor 30 V 3-Pin SOT-23 PBSS4130T,215

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Nexperia Low Saturation Voltage 1 A NPN Bipolar Junction Transistor 30 V 3-Pin SOT-23 PBSS4130T,215

Name: Nexperia Low Saturation Voltage 1 A NPN Bipolar Junction Transistor 30 V 3-Pin SOT-23 PBSS4130T,215
Brand: Nexperia
SKU: 338349
Price: 0.12 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1.1mm
Length	3mm
Model	PBSS4130T,215
Width	2.5mm
Mount Type	Surface
Series	PBSS4130T
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-65°C
Standards/Approvals	RoHS
Pin Count	3
Maximum Collector Emitter Voltage Vceo	30V
Minimum DC Current Gain hFE	300
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	40V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	480mW
Maximum DC Collector Current Idc	1A
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

Maximum collector current of 1 ampere for reliable performance.
Collector-emitter voltage rating of 30 volts ensuring robust operation.
Compact 3-pin SOT-23 surface mount package for space-saving designs.
High current gain with a minimum hFE of 300 for amplification efficiency.
Wide operating temperature range from -65°C to 150°C.
Low collector-emitter saturation voltage reduces power losses and heat generation.
Meets RoHS compliance and automotive standard AEC-Q101 for quality assurance.
Maximum power dissipation of 480 milliwatts suitable for small signal applications.

Product Description

Nexperia PBSS4130T,215 is a low saturation voltage NPN bipolar junction transistor optimized for switching and amplification in electronic circuits. Rated for a maximum collector current of 1 A and a collector-emitter voltage of 30 V, this transistor provides high efficiency in compact applications with its 3-pin SOT-23 surface mount package.

The device supports a wide operating temperature range from -65°C to 150°C, making it suitable for industrial, automotive, and electronic manufacturing environments. Its low collector-emitter saturation voltage results in reduced power loss and minimal thermal generation, enhancing overall circuit efficiency.

This transistor features a minimum DC current gain (hFE) of 300, ensuring effective signal amplification in analog and digital circuits. The maximum power dissipation rating of 480 mW is appropriate for small signal applications where low power consumption is essential.

The PBSS4130T,215 series complies with RoHS standards and automotive grade AEC-Q101 specifications, confirming its reliability and environmental friendliness. Its compact dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height facilitate integration into densely packed PCB designs.

Maximum DC collector current: 1 A. Maximum collector-emitter voltage: 30 V. Package type: 3-pin SOT-23 surface mount. Minimum DC current gain (hFE): 300. Operating temperature range: -65°C to 150°C. Maximum power dissipation: 480 mW.

Automotive standard: AEC-Q101. RoHS compliant.

This transistor is ideal for use in industrial electronics, automotive systems, power management circuits, and small signal applications. Its efficient switching reduces energy consumption and heat dissipation, improving device longevity and performance.

For engineers and designers, the PBSS4130T,215 transistor provides a dependable component choice for enhancing circuit function in demanding environments. Its space-saving package and robust ratings make it suitable for a wide range of applications.

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