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ROHM 100 V 6 A Recovery Diode, Surface Mount TUMD2M Package RF05VYM1SFHTR

Category Schottky Diode Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 0.8mm
Length 2.5mm
Model RF05VYM1SFHTR
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type TUMD2M
Pin Count 2
Maximum Continuous Forward Current If 6A
Peak Reverse Repetitive Voltage Vrrm 100V
Diode Configuration Single
Rectifier Type Recovery
Maximum Forward Voltage Vf 0.98V

Key Features

  • Maximum forward voltage drop of 0.98 V optimizes power efficiency.
  • Designed for high-frequency rectification applications.
  • Operates reliably at temperatures up to 150°C.
  • Compact size with dimensions 2.5 mm length, 1.4 mm width, 0.8 mm height.
  • Single diode configuration with recovery rectifier type.
  • Not compliant with automotive standards; general electronic use.
  • Suitable for diodes requiring recovery characteristics in power and semiconductor circuits.

Product Description

ROHM RF05VYM1SFHTR is a high-performance recovery diode designed for electronic and power applications. This diode features a maximum peak reverse voltage of 100 V and supports a maximum continuous forward current of 6 A, making it suitable for high-frequency rectification and power conversion circuits. Packaged in a compact TUMD2M surface mount package, it offers easy integration on modern PCB designs where space is critical.

The diode exhibits a low forward voltage drop of 0.98 V, which enhances power efficiency and reduces heat generation during operation. It has a single diode configuration and a recovery type rectifier, optimizing performance in switching and recovery scenarios.

Its maximum operating temperature of 150°C ensures reliable functionality under demanding thermal conditions encountered in industrial, electronic, and power management systems. The diode is constructed with a silicon epitaxial planar structure and housed in a small mold type package measuring 2.5 mm in length, 1.4 mm in width, and 0.8 mm in height.

This diode is ideal for use in industrial electronics, power supplies, converters, and other semiconductor applications requiring medium forward current and voltage ratings with efficient recovery characteristics. Although it is not designed to meet automotive standards, it serves well in laboratory, manufacturing, and general electronics projects.

Manufactured with silicon epitaxial planar technology for high reliability. Compact TUMD2M surface mount package for space saving in PCB layouts. Supports maximum forward current of 6 A and peak voltage of 100 V. Low forward voltage drop of 0.98 V enhances electrical efficiency.

Operates continuously at temperatures up to 150°C. Single diode configuration suited for rectifier recovery applications. Ideal for electronic components, power supply units, and switch mode power supplies.

Set your designs apart by incorporating the ROHM RF05VYM1SFHTR recovery diode, engineered for precision, performance, and reliability across diverse industrial and electronic sectors. Browse the ROHM range on EnvMart for more semiconductor solutions tailored to your project requirements.

Explore more products in our Schottky Diode category.

ROHM 100 V 6 A Recovery Diode, Surface Mount TUMD2M Package RF05VYM1SFHTR
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Frequently Asked Questions

The maximum peak reverse voltage for this diode is 100 V.

It supports a maximum continuous forward current of 6 A.

The maximum forward voltage drop is 0.98 V, which optimizes power efficiency.

This diode operates reliably at temperatures up to 150°C.

The dimensions of the TUMD2M package are 2.5 mm in length, 1.4 mm in width, and 0.8 mm in height.

It is a recovery type rectifier, designed for high-frequency rectification applications.

No, it is not compliant with automotive standards and is intended for general electronic use.

The diode has a pin count of 2.

It is suitable for use in industrial electronics, power supplies, converters, and other semiconductor applications requiring recovery characteristics.

This model uses surface mounting.

The country of origin for this diode is India.

It is constructed with silicon epitaxial planar technology for high reliability.

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