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onsemi 650 V 8 A Silicon Carbide (SiC) Schottky Diode Surface Mount PQFN 5-Pin FFSM0865B
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.1mm |
| Length | 8mm |
| Model | FFSM0865B |
| Width | 8mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 5 |
| Maximum Continuous Forward Current If | 8A |
| Peak Reverse Repetitive Voltage Vrrm | 650V |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 40μA |
| Maximum Forward Voltage Vf | 1.7V |
Key Features
- High efficiency with superior switching performance for power applications.
- Silicon carbide technology enables faster operating frequency and higher reliability.
- Compact 8mm x 8mm x 1.1mm PQFN package with 5 pins for easy surface mounting.
- Peak reverse repetitive voltage of 650 V and maximum forward voltage of 1.7 V ensure durability.
- Wide operating temperature range from -55°C to 175°C for industrial usage.
- Ideal for use in inverters, switch mode power supplies, and uninterruptible power supplies.
- Low peak reverse current of 40μA reduces leakage and improves efficiency.
- Non-automotive rated device suited for general industrial uses.
Product Description
onsemi FFSM0865B is a silicon carbide (SiC) Schottky Diode designed for high efficiency and reliability in power electronic applications. This discrete semiconductor device features an 8 A maximum continuous forward current and a peak reverse repetitive voltage rating of 650 V, housed in a compact 5-pin PQFN surface mount package measuring 8 mm in length and width, and 1.1 mm in height.
The silicon carbide technology provides superior switching performance over traditional silicon diodes, enabling faster operating frequencies and increased power density. This results in reduced electromagnetic interference (EMI) and improved overall system performance.
With a maximum forward voltage of 1.7 V and peak reverse current of only 40μA, the FFSM0865B diode exhibits excellent efficiency and low power loss. It is rated for industrial temperature ranges from -55°C minimum to 175°C maximum, making it suitable for demanding applications in power conversion and management.
Typical applications include inverters, switch-mode power supplies (SMPS), and uninterruptible power supplies (UPS). Its surface mount PQFN package allows for automated PCB assembly and compact electronic designs.
High efficiency with superior switching performance for power applications. Silicon carbide technology enables faster operating frequency and higher reliability. Compact 8mm x 8mm x 1.1mm PQFN package with 5 pins for easy surface mounting.
Peak reverse repetitive voltage of 650 V and maximum forward voltage of 1.7 V ensure durability. Wide operating temperature range from -55°C to 175°C for industrial usage. Ideal for use in inverters, SMPS, and UPS power systems.
Low peak reverse current of 40μA reduces leakage and improves efficiency. Non-automotive rated device suited for general industrial uses.
This product complies with RoHS directives and is supplied new in packaging suitable for bulk or reel use. It is a trusted solution for enhancing power density and efficiency in modern electronic designs. Browse EnvMart's extensive range of semiconductor diodes and related components for your project needs.
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Frequently Asked Questions
The maximum continuous forward current of this model is 8 A.
It has a peak reverse repetitive voltage rating of 650 V.
This diode comes in a PQFN package type with dimensions of 8 mm x 8 mm x 1.1 mm.
The operating temperature range is from -55°C to 175°C.
The maximum forward voltage is 1.7 V.
The peak reverse current is 40μA.
Typical applications include inverters, switch-mode power supplies (SMPS), and uninterruptible power supplies (UPS).
This model has 5 pins.
It uses a surface mount type.
No, this diode is a non-automotive rated device suited for general industrial uses.
This diode utilizes silicon carbide (SiC) technology for improved efficiency and switching performance.
The country of origin for this diode is India.
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