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Nexperia Small Signal PNP Transistor BC857B,215, 100 mA, 45 V, 250 mW, 3-Pin SOT-23 BC857B,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model BC857B,215
Width 1.4mm
Mount Type Surface
Series BC857
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 220
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
onsemi BC857BLT1G Transistor, -100 mA PNP, -45 V, 3-Pin SOT-23Brand onsemi
Infineon BC857B PNP Bipolar Transistor, 100 mA, 45 V, 3-Pin SOT-23Brand Infineon

Key Features

  • Designed for surface mount applications with SOT-23 package type.
  • Provides a maximum power dissipation of 250 mW for reliable operation.
  • Features a minimum DC current gain (hFE) of 220 for efficient switching.
  • Operates in a wide temperature range from -65°C to 150°C.
  • Meets RoHS standards and automotive standard AEC-Q101 for quality assurance.
  • Compact dimensions of 3mm length, 1.4mm width, and 1.1mm height.
  • Suitable for small signal amplification and switching in electronic circuits.

Product Description

The Nexperia BC857B,215 is a small signal PNP transistor designed for surface mount applications featuring a compact 3-Pin SOT-23 package. It supports a maximum DC collector current of 100 mA and a maximum collector emitter voltage of 45 V, making it suitable for low power electronic switching and amplification tasks.

It offers stable operation with a maximum power dissipation rating of 250 mW and a minimum DC current gain (hFE) of 220, ensuring efficient performance in various circuit designs. The wide operating temperature range from -65°C to 150°C makes it ideal for automotive and industrial environments.

The transistor complies with RoHS regulations and the rigorous automotive standard AEC-Q101, confirming its quality and reliability in demanding applications. Its compact dimensions (3mm length, 1.4mm width, and 1.1mm height) allow space-saving designs on printed circuit boards.

This PNP transistor is commonly used in small signal amplification, switching, and interface applications in electronic devices, automotive electronics, and industrial control systems.

Designed for surface mounting with SOT-23 package type. Maximum DC collector current of 100 mA and voltage of 45 V. Power dissipation capability of up to 250 mW. Minimum current gain (hFE) rating of 220. Wide operating temperature from -65°C to 150°C for harsh environments.

RoHS compliant and meets automotive standard AEC-Q101. Explore our broad selection of semiconductor components and Bipolar Transistors suitable for diverse industrial, automotive, and consumer electronics applications at EnvMart.

Nexperia Small Signal PNP Transistor BC857B,215, 100 mA, 45 V, 250 mW, 3-Pin SOT-23 BC857B,215
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

It has a maximum power dissipation capability of 250 mW.

This transistor operates within a temperature range from -65°C to 150°C.

It is designed in a compact 3-Pin SOT-23 package type.

The minimum DC current gain (hFE) is rated at 220.

The dimensions are 3mm in length, 1.4mm in width, and 1.1mm in height.

It meets RoHS standards and the automotive standard AEC-Q101 for quality assurance.

The maximum collector-emitter voltage (Vceo) is 45 V.

Yes, it is suitable for small signal amplification and switching in electronic circuits.

The maximum transition frequency (ft) is 100 MHz.

The maximum emitter-base voltage (VEBO) is 5 V.

This model is a PNP transistor.

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