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STMicroelectronics NPN Darlington Transistor 15A 400V 135W TO-247 Mount Through Hole 3-Pin BU931P

Category Darlington Transistor Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 20.15mm
Length 15.75mm
Model BU931P
Mount Type Through Hole
Series BU931P
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic 15A
Maximum Collector Emitter Voltage Vceo 400V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 300
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V
Maximum Collector Cut-off Current 0.5mA
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 135W
STMicroelectronics 1 Darlington Transistor NPN, 15 A 400 V HFE 300, 3-Pin TO-247

Key Features

  • This transistor features a maximum power dissipation of 135 watts for high performance.
  • Its minimum DC current gain (hFE) is 300, ensuring strong amplification.
  • Designed for through-hole mounting with a 3-pin configuration for ease of integration.
  • Operates efficiently between -65°C and 175°C for industrial and automotive applications.
  • Maximum saturation voltage of 1.6V minimizes power losses.
  • Meets AEC-Q101 automotive standard for reliability in harsh environments.
  • Compact dimensions with height 20.15mm and length 15.75mm optimize PCB space.

Product Description

STMicroelectronics BU931P is a high-performance NPN Darlington transistor designed to handle a maximum continuous collector current of 15 amperes and a collector-emitter voltage rating of 400 volts. Packaged in a TO-247 case, this transistor provides robust power handling capabilities with a maximum power dissipation of 135 watts. Its minimum DC current gain (hFE) of 300 assures excellent amplification characteristics suitable for power switching and amplification circuits.

The device is made for through-hole mounting and features three pins, making it convenient for assembly in various electronic and industrial designs. The transistor operates reliably in a temperature range from -65°C to 175°C, catering to both standard and automotive applications that demand durability under extreme conditions.

With a maximum collector-emitter saturation voltage of 1.6V, the BU931P reduces power losses and increases efficiency in switching applications. It also adheres to the AEC-Q101 automotive standard, ensuring compliance with rigorous automotive reliability requirements.

Its compact form factor, measuring 20.15 mm in height and 15.75 mm in length, allows for efficient space utilization on printed circuit boards. This single-element Darlington Transistor forms part of a broad range of bipolar transistors from STMicroelectronics renowned for their reliability and performance in power electronics.

Maximum continuous collector current: 15 A. Collector-emitter voltage (Vceo): 400 V. Minimum DC current gain (hFE): 300. Maximum power dissipation: 135 W. Package: TO-247, through-hole mounting. Operating temperature range: -65°C to 175°C.

Maximum collector-emitter saturation voltage (VceSAT): 1.6 V. Automotive standard: AEC-Q101 certified.

This transistor is ideal for industrial, automotive, and power management applications requiring robust switching and amplification capabilities. It supports reliable operation under high voltage and current stresses, making it suitable for power regulators, motor controls, and other semiconductor-based power control circuits.

Explore more semiconductor components at EnvMart to find complementary devices that enhance your system design and performance.

STMicroelectronics NPN Darlington Transistor 15A 400V 135W TO-247 Mount Through Hole 3-Pin BU931P
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Frequently Asked Questions

The maximum continuous collector current for this model is 15 amperes.

The collector-emitter voltage rating of the BU931P is 400 volts.

This transistor features a maximum power dissipation of 135 watts.

The minimum DC current gain (hFE) for the BU931P is 300.

It operates efficiently between -65°C and 175°C.

This model is designed for through-hole mounting with a 3-pin configuration.

The dimensions of this transistor are 20.15 mm in height and 15.75 mm in length.

The maximum collector-emitter saturation voltage (VceSAT) is 1.6 volts.

It meets the AEC-Q101 automotive standard for reliability in harsh environments.

The maximum emitter-base voltage (VEBO) for this model is 5 volts.

This transistor contains one element per chip.

It is suitable for industrial, automotive, and power management applications requiring robust switching and amplification capabilities.

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