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ROHM N-Channel MOSFET 380 mA 60 V Enhancement 3-Pin UMT BSS138BKWT106

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ROHM N-Channel MOSFET 380 mA 60 V Enhancement 3-Pin UMT BSS138BKWT106

Name: ROHM N-Channel MOSFET 380 mA 60 V Enhancement 3-Pin UMT BSS138BKWT106
Brand: ROHM
SKU: 322121
Price: 0.08 USD
Availability: InStock

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Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	1mm
Length	2.1mm
Model	BSS138BKWT106
Width	1.35mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	UMT
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	380mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	680mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	300mW
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

This MOSFET supports a maximum continuous drain current of 380 mA.
It withstands a maximum drain-source voltage of 60 V.
The device features a low maximum drain-source resistance of 680 mΩ to ensure efficient operation.
Its compact UMT package has dimensions of 2.1 mm length, 1.35 mm width, and 1 mm height.
It supports surface mount technology for easy PCB integration.
The transistor operates over a temperature range from -55°C to 150°C.
It features a maximum power dissipation of 300 mW suitable for low power applications.
The maximum gate-source voltage rating is 20 V, ensuring reliable switching control.

Product Description

ROHM BSS138BKWT106 N-Channel MOSFET is a high-quality discrete semiconductor device designed specifically for switching circuit and relay driver applications. Its 3-pin UMT package integrates an ESD protection diode and delivers reliable performance with a maximum continuous drain current of 380 mA and a drain-source voltage rating of 60 V.

Featuring an enhancement mode channel with low on-resistance (680 mΩ), this MOSFET minimizes power losses and heat generation, making it ideal for compact and efficient power circuits. The UMT package measures 2.1 mm in length, 1.35 mm in width, and 1 mm in height, supporting surface mount technology for precise PCB assembly.

Operating reliably across a wide temperature range from -55°C to 150°C, the device’s maximum power dissipation is rated at 300 mW. It is well suited for automotive, industrial, and consumer electronics where durability and small footprint are critical.

The maximum gate-source voltage of 20 V allows robust switching control, while the low forward voltage drop of 1.2 V improves circuit efficiency. This lead-free and halogen-free MOSFET meets environmental compliance requirements and offers high reliability reinforced by its automotive-grade qualification to AEC-Q101 standards.

Typical industrial applications include switching circuits, high-side load switches, and relay drivers in electronic devices, automotive modules, and other power management systems. The compact size, reliable control, and rugged operational characteristics ensure this MOSFET is a dependable component for a wide range of semiconductor applications.

This MOSFET supports a maximum continuous drain current of 380 mA. It withstands a maximum drain-source voltage of 60 V. Low maximum drain-source resistance of 680 mΩ for efficient operation. Compact 3-pin UMT package with surface mount technology.

Wide operating temperature range from -55°C to 150°C. Maximum power dissipation rated at 300 mW. Maximum gate-source voltage rating of 20 V. Forward voltage drop of 1.2 V optimizes efficiency. Lead-free and halogen-free compliant construction.

Automotive-grade AEC-Q101 qualified for high reliability. Explore more electronic components and semiconductors in the Electronics & Electricals category at EnvMart for your industrial and design requirements.