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onsemi Darlington Transistor PNP 15 A 250 V 3-Pin TO-247 MJH11021G

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onsemi Darlington Transistor PNP 15 A 250 V 3-Pin TO-247 MJH11021G

Name: onsemi Darlington Transistor PNP 15 A 250 V 3-Pin TO-247 MJH11021G
Brand: onsemi
SKU: 315237
Price: 4.44 USD
Availability: InStock

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Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	21.08mm
Length	16.26mm
Model	MJH11021G
Mount Type	Through Hole
Series	MJH11017
Maximum Operating Temperature	150°C
Package Type	TO-247
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Continuous Collector Current Ic	15A
Maximum Collector Emitter Voltage Vceo	250V
Number of Elements per Chip	1
Minimum DC Current Gain hFE	100
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Emitter Saturation Voltage VceSAT	2.5V
Maximum Collector Base Voltage VCBO	250V
Maximum Collector Cut-off Current	5mA
Maximum Power Dissipation Pd	150W
onsemi MJH11021G 1 Darlington Transistor PNP, 15 A 250 V HFE	100, 3-Pin TO-247

Key Features

This PNP Darlington Transistor features a maximum continuous collector current of 15 A.
It supports a maximum collector-emitter voltage of 250 V, suitable for high voltage operations.
The transistor package is TO-247 with through-hole mount type, enabling easy PCB integration.
It provides a minimum DC current gain (hFE) of 100 ensuring efficient amplification.
The maximum power dissipation rating is 150 W, allowing heavy-duty use.
Operating temperature ranges widely from -65°C to 150°C for versatile industrial reliability.
Pin count is 3 with 1 element per chip, optimized for discrete power applications.
Collector saturation voltage maximum is 2.5 V, supporting efficient switching.

Product Description

onsemi MJH11021G is a high-performance PNP Darlington transistor designed for semiconductor applications requiring robust current and voltage handling. It delivers a maximum continuous collector current of 15 A and can withstand collector-emitter voltages up to 250 V, making it suitable for power amplification and switching tasks.

This transistor is housed in an industry-standard TO-247 package featuring a through-hole mount, facilitating reliable mechanical and electrical connections on printed circuit boards. Its 3-pin configuration supports efficient discrete semiconductor applications.

With a minimum DC current gain (hFE) of 100 and maximum power dissipation of 150 W, the MJH11021G ensures high amplification efficiency and thermal management. Its operational temperature range from -65°C to 150°C broadens its usability across varied industrial environments, including automotive and manufacturing sectors.

The device exhibits a maximum collector-emitter saturation voltage of 2.5 V, enabling low-loss switching and improved overall circuit efficiency. Protective voltage ratings include a maximum emitter-base voltage of 5 V and collector-base voltage of 250 V for device integrity under high load conditions.

Physical dimensions such as a height of 21.08 mm and length of 16.26 mm comply with standard form factors, allowing easy integration into existing designs. This transistor is applicable in power amplification, switching, and industrial control circuits.

Suitable for automotive electronics, power supplies, and inverter applications requiring high reliability. TO-247 package ensures ease of mounting and heat dissipation for sustained performance. High current and voltage ratings make it ideal for robust and demanding electrical environments.

Wide operating temperature range supports use in extreme conditions.

Choose onsemi MJH11021G for dependable, high-current PNP Darlington transistor performance in your semiconductor electronic designs. Explore similar products in the Darlington Transistor category on EnvMart for complementary components and upgrades.