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Nexperia Small Signal PNP Transistor -200 mA, -40 V, 3-Pin SOT-23 PMBT3906,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 3mm
Model PMBT3906,215
Width 2.5mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -40V
Minimum DC Current Gain hFE 30
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 40V
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc -200mA
Transistor Configuration Single
onsemi MMBT3906LT1G Transistor, -200 mA PNP, -40 V, 3-Pin SOT-23Brand onsemi

Key Features

  • Small signal transistor suitable for switching and amplification purposes.
  • PNP transistor configuration with a maximum collector current of -200 mA.
  • Surface mount type with SOT-23 package for PCB mounting.
  • Maximum power dissipation rated at 250 mW ensuring reliable operation.
  • Wide operating temperature range from -65°C to 150°C.
  • Device has a minimum DC current gain (hFE) of 30 for effective performance.
  • Compact dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height.
  • Designed without automotive standards compliance, suitable for general electronic applications.

Product Description

Nexperia PMBT3906,215 is a small signal PNP bipolar junction transistor engineered for low power switching and amplification in electronic circuits. Packaged in a surface mount SOT-23 3-pin form factor, the device suits densely packed PCB assemblies requiring reliable transistor performance.

The transistor supports a maximum DC collector current of -200 mA and withstands collector-emitter voltages up to -40 V, enabling usage in standard switching and amplification roles at modest power levels. It is rated for a maximum power dissipation of 250 mW ensuring consideration for heat management in design.

This device features a transistor polarity of PNP and offers a minimum DC current gain (hFE) of 30, which maintains effectiveness in signal amplification tasks. Operating temperature range spans from a minimum of -65°C to a maximum of 150°C, making it suitable for extended environmental conditions.

The compact dimensions (3 mm length, 2.5 mm width, 1.1 mm height) facilitate surface mount applications on modern PCBs. Typical applications include electronic switching, signal amplification, and general purpose small signal transistor uses in industrial, consumer electronics, automotive (non-certified), and communication devices.

Small signal transistor suitable for switching and amplification purposes. PNP transistor configuration with a maximum collector current of -200 mA. Surface mount type with SOT-23 package for PCB mounting. Maximum power dissipation rated at 250 mW ensuring reliable operation.

Wide operating temperature range from -65°C to 150°C. Device has a minimum DC current gain (hFE) of 30 for effective performance. Compact dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height. Maximum voltages: collector base - 40 V, emitter base - 6 V.

Designed without automotive standards compliance, suitable for general electronic applications.

This transistor is ideal for applications in electronic components production, power and connector semiconductor devices, and discrete semiconductor circuits. It is a reliable solution for industrial, laboratory, and manufacturing use cases requiring efficient signal switching and amplification in 3-pin surface mount device configurations.

Buy this Nexperia bipolar transistor model PMBT3906,215 for precise and durable performance in your electronic device assemblies. Explore more semiconductor components for diverse industrial, commercial, and electronic manufacturing applications at EnvMart.

Explore more products in our Bipolar Transistors category.

Nexperia Small Signal PNP Transistor -200 mA, -40 V, 3-Pin SOT-23 PMBT3906,215
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Frequently Asked Questions

The PMBT3906,215 has a maximum collector current of -200 mA.

This model operates within a temperature range of -65°C to 150°C.

It is packaged in a surface mount SOT-23 configuration.

The maximum power dissipation for the PMBT3906,215 is rated at 250 mW.

The dimensions of this model are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

The PMBT3906,215 has a minimum DC current gain (hFE) of 30.

This transistor can withstand a maximum collector-emitter voltage of -40 V.

The transistor polarity for this model is PNP.

The maximum emitter-base voltage (VEBO) for the PMBT3906,215 is 6 V.

This model is suitable for electronic switching, signal amplification, and general purpose small signal applications.

The PMBT3906,215 features a 3-pin configuration.

The PMBT3906,215 is manufactured in India.

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