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STMicroelectronics High Voltage NPN Transistor, 8 A Collector Current, 700 V Collector-Emitter Voltage, 125 W Power BU508AW
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 34.95mm |
| Length | 15.75mm |
| Model | BU508AW |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | 0°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 700V |
| Minimum DC Current Gain hFE | 5 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 9V |
| Maximum Collector Base Voltage VCBO | 9V |
| Maximum Power Dissipation Pd | 125W |
| Maximum DC Collector Current Idc | 8A |
| Transistor Configuration | Single |
Key Features
- Suitable for high voltage switching and amplification applications.
- Features a single transistor configuration with 3 pins.
- Mount type is through-hole for reliable PCB insertion.
- Operating temperature range from 0°C to 150°C allows for robust performance.
- Maximum DC current gain (hFE) of 5 supports power control applications.
- Collector-base voltage of 9 V and emitter-base voltage of 9 V ensure stable transistor operation.
Product Description
STMicroelectronics BU508AW is a high voltage NPN bipolar transistor designed for applications requiring high collector current and voltage tolerance. Rated for a maximum collector current of 8 A and a collector-emitter voltage of 700 V, this transistor supports power dissipation up to 125 W, making it suitable for industrial and electronic component designs requiring reliable switching or amplification.
It comes in a TO-247 package with three pins, designed for through-hole mounting to ensure secure and durable fit on PCBs. The transistor configuration is single, providing standard bipolar transistor characteristics with a DC current gain minimum of 5, enabling control of high power loads.
The device operates safely within a temperature range of 0°C to 150°C, enhancing its applicability in environments with moderate to high operating temperatures such as industrial control systems, power supplies, and motor drives.
The transistor is built with a maximum collector-base voltage of 9 V and emitter-base voltage of 9 V, ensuring electrical stability during high voltage switching tasks. Its compact dimensions - 34.95 mm height, 15.75 mm length, and 5.15 mm width - support optimal heat dissipation when mounted.
High voltage NPN bipolar transistor for power applications. 8 A maximum collector current and 700 V collector-emitter voltage rating. 125 W maximum power dissipation capacity. Single transistor configuration with 3-pin TO-247 package.
Through-hole mount type for circuit board assembly. Operating temperature range from 0 to 150 degrees Celsius. Minimum DC current gain of 5 for efficient power handling. This robust transistor is ideal for use in power electronics, industrial automation, motor drives, and other applications requiring high voltage and current tolerance.
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Frequently Asked Questions
The maximum collector current for this transistor is 8 A.
The collector-emitter voltage rating is 700 V.
It supports a maximum power dissipation of 125 W.
The dimensions are 34.95 mm in height, 15.75 mm in length, and 5.15 mm in width.
This model uses a through-hole mount type for reliable PCB insertion.
It operates within a temperature range of 0°C to 150°C.
The minimum DC current gain (hFE) is 5.
It comes in a TO-247 package type.
The configuration is single, with a total of 3 pins.
The maximum collector-base voltage is 9 V and the maximum emitter-base voltage is also 9 V.
The country of origin for this transistor is India.
It is suitable for high voltage switching and amplification applications, including industrial control systems and power supplies.
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