Infineon 650 V 41 A Schottky Barrier Diode TO-220-2 IDH20G65C6XKSA1

The Infineon IDH20G65C6XKSA1 is a high-performance Schottky Barrier Diode designed for demanding electronic applications requiring efficient switching and power handling capabilities. With a repetitive peak reverse voltage of 650 V and a maximum continuous forward current rating of 41 A, this diode is well-suited for power conversion and rectification tasks.

The device utilizes through-hole mounting technology with a TO-220-2 package, providing robust mechanical support and effective heat dissipation for industrial, automotive, and general electronic manufacturing environments. The maximum forward voltage drop of 1.25 V contributes to lower conduction losses, improving system efficiency and reducing heat generation.

Engineered to operate within a wide temperature range from -55°C to 175°C, it is capable of functioning reliably in harsh environments, including industrial, automotive, and power supply applications. The peak non-repetitive forward surge current of 99 A allows it to withstand occasional surge currents without damage, ensuring durability and longevity.

The diode's low peak reverse current of 153 μA assists in minimizing leakage, enhancing overall circuit performance. The product is compliant with JEDEC standards J-STD20 and JESD22, affirming its quality and reliability within semiconductor industry standards.

This Schottky diode is an excellent choice for system efficiency improvement, reducing system cost and size due to reduced cooling requirements. It supports higher switching frequency and increased power density, making it ideal for power supply, inverter circuits, and industrial electronics applications.

This diode features a through-hole mount with TO-220-2 package type suitable for robust installation. Supports a peak reverse repetitive voltage of 650 V. Maximum forward voltage of 1.25 V ensures efficient conduction. Operates reliably between temperatures of -55°C to 175°C, supporting harsh conditions.

Peak non-repetitive forward surge current is rated at 99 A, allowing for transient overloads. Schottky diode configuration with low peak reverse current of 153 μA minimizes leakage. Complies with JEDEC standards J-STD20 and JESD22 ensuring quality and reliability.

Designed for power applications requiring enhanced efficiency and reduced cooling. Through-hole mounting supports ease of PCB assembly and replacement. Explore more Schottky Barrier Diodes and semiconductor components at EnvMart to meet your industrial and electronic design needs.