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STMicroelectronics Bipolar Transistor, 15 A, 100 V, NPN, 3-Pin TO-263 2STBN15D100
Specifications
| Country of Origin | Planar technology with |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.85mm |
| Length | 10.4mm |
| Model | 2STBN15D100 |
| Width | 4.6mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Minimum DC Current Gain hFE | 750 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Power Dissipation Pd | 70W |
| Maximum DC Collector Current Idc | 15A |
| Transistor Configuration | Common Emitter |
Key Features
- Maximum collector current of 15 Amperes for high power applications.
- Collector-emitter voltage rating of 100 Volts ensures robust operation.
- TO-263 surface mount package supports compact PCB designs.
- Monolithic Darlington configuration with integrated antiparallel diode enhances switching efficiency.
- High minimum DC current gain (hFE) of 750 for better amplification.
- Wide operating temperature range from -65°C to 150°C for versatile industrial use.
- Common emitter transistor configuration suitable for many electronic circuits.
- Maximum power dissipation rating of 70 Watts for heavy-duty performance.
Product Description
STMicroelectronics 2STBN15D100 Bipolar Transistor is engineered using planar technology with a base island layout and monolithic Darlington configuration, delivering excellent linearity and reliable switching performance. It offers a high collector current rating of 15 A and a voltage rating of 100 V, making it ideal for demanding industrial electronic circuits.
This NPN transistor comes in a compact 3-pin TO-263 surface mount package, facilitating efficient PCB layout integration. The device features an integrated antiparallel collector-emitter diode and a high minimum DC current gain (hFE) of 750, ensuring superior amplification and switching efficiency.
With a maximum power dissipation of 70 W, it can handle heavy loads and high power dissipation requirements, suitable for linear and switching industrial equipment. The transistor operates reliably across a wide temperature range from -65°C to 150°C, ensuring durability in harsh environments.
The device's compact physical dimensions - 10.4 mm length, 15.85 mm height, and 4.6 mm width - support miniaturized electronic designs while maintaining performance standards.
Applications include industrial automation, power supplies, and other electronic systems requiring robust bipolar transistors with consistent characteristics and dependable performance.
Maximum collector current of 15 Amperes. Collector-emitter voltage rating of 100 Volts. TO-263 surface mount package type. Common emitter transistor configuration. Monolithic Darlington configuration with integrated antiparallel diode.
Minimum current gain (hFE) of 750. Operating temperature range from -65°C to 150°C. Maximum power dissipation 70 Watts. NPN transistor polarity. Compact package dimensions for PCB integration. Explore STMicroelectronics Bipolar Transistors in EnvMart for reliable, high-performance semiconductor components supporting diverse industrial and electronic applications.
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Frequently Asked Questions
The maximum collector current for this model is 15 Amperes, making it suitable for high power applications.
This transistor has a collector-emitter voltage rating of 100 Volts, ensuring robust operation in various applications.
It comes in a TO-263 surface mount package, which supports compact PCB designs.
The minimum DC current gain (hFE) is 750, providing better amplification for electronic circuits.
This model operates reliably across a wide temperature range from -65°C to 150°C, making it versatile for industrial use.
The maximum power dissipation rating is 70 Watts, allowing it to handle heavy-duty performance requirements.
It features a common emitter transistor configuration, which is suitable for many electronic circuits.
The dimensions are 10.4 mm in length, 15.85 mm in height, and 4.6 mm in width, supporting miniaturized designs.
The maximum emitter-base voltage (VEBO) is 5 Volts, which is important for its operation in circuits.
It is suitable for applications in industrial automation, power supplies, and other electronic systems requiring robust performance.
Yes, it features an integrated antiparallel collector-emitter diode, enhancing switching efficiency.
It is engineered using planar technology with a base island layout, which contributes to its reliability and performance.
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