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onsemi 30 V 100 mA Surface Mount Schottky Barrier Diode DSN0201 NSR01L30NXT5G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.29mm |
| Length | 0.6mm |
| Model | NSR01L30NXT5G |
| Width | 0.3mm |
| Mount Type | Surface |
| Series | NSR01L30 |
| Maximum Operating Temperature | 125°C |
| Package Type | DSN0201 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 100mA |
| Peak Reverse Repetitive Voltage Vrrm | 30V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | -0.2μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 4A |
| Maximum Forward Voltage Vf | -400mV |
Key Features
- The diode supports a maximum continuous forward current of 100 mA.
- It features a peak reverse repetitive voltage of 30 V and low peak reverse current.
- The DSN0201 compact package dimension is 0.6 mm length, 0.3 mm width, and 0.29 mm height.
- Designed for low leakage current and reduced power dissipation in compact circuit designs.
- Suitable for LCD and keypad backlighting and camera photo flash applications.
- Operates reliably in temperatures from -40°C up to 125°C.
- Offers high peak non-repetitive forward surge current of 4 A.
- The two-pin single diode configuration enables efficient board space usage.
Product Description
onsemi NSR01L30NXT5G is a Schottky Barrier Diode designed for surface mount applications with superior low forward voltage drop and minimal leakage current for power-sensitive designs. Packaged in the DSN0201 chip-level surface mount package, this diode delivers high performance with a compact footprint measuring 0.6 mm length, 0.3 mm width, and 0.29 mm height.
This device supports a maximum continuous forward current of 100 mA and can withstand a peak reverse repetitive voltage of 30 V, making it suitable for various voltage regulation and protection circuits. Its low forward voltage drop (maximum 400 mV) reduces power dissipation and enhances battery life in portable electronics. The diode features a low peak reverse current of -0.2 μA and can handle a peak non-repetitive forward surge current up to 4 A.
The operating temperature range from -40°C to 125°C ensures reliable performance in harsh industrial and commercial environments. The DSN0201 package enables 100% utilization of the package area for active silicon, providing significantly better performance per board area compared to plastic molded packages.
Typical applications include LCD and keypad backlighting, camera photo flashes, and compact power rectification circuits requiring fast switching speeds and low losses. The diode’s single two-pin configuration simplifies integration into tight PCB layouts.
Maximum continuous forward current of 100 mA. Peak reverse repetitive voltage rating of 30 V. Low forward voltage drop ensures reduced power losses. Compact DSN0201 package maximizes PCB space efficiency. High surge current capability supports transient load conditions.
Wide operating temperature range (-40°C to 125°C) for industrial use. Optimized for fast switching and low leakage current. Single diode with two-pin configuration.
This onsemi Schottky Barrier Diode is a reliable component choice for electronics, industrial machinery, and HVAC controls requiring efficient and compact semiconductor diodes. Explore more semiconductor components and Schottky diode solutions in EnvMart’s electronics category.
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Frequently Asked Questions
The maximum continuous forward current for this model is 100 mA.
This diode has a peak reverse repetitive voltage rating of 30 V.
The DSN0201 package has dimensions of 0.6 mm in length, 0.3 mm in width, and 0.29 mm in height.
It operates reliably in temperatures ranging from -40°C to 125°C.
The diode can handle a peak non-repetitive forward surge current of up to 4 A.
The maximum forward voltage drop is -400 mV.
This model is designed for surface mounting.
It features a two-pin configuration.
The peak reverse current is -0.2 μA.
Typical applications include LCD and keypad backlighting, camera photo flashes, and compact power rectification circuits.
The DSN0201 package design allows for 100% utilization of the package area for active silicon, enhancing performance per board area compared to plastic molded packages.
The diode is manufactured in India.
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