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Nexperia Silicon Junction Switching Diode 2-Pin SOD-523 250 mA 300 V BAS521,115

Category Switching Diodes Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 0.65mm
Length 1.25mm
Model BAS521,115
Width 0.85mm
Mount Type Surface
Series BAS521
Maximum Operating Temperature 150°C
Package Type SOD-523
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Power Dissipation Pd 500mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 4.5A
Maximum Forward Voltage Vf 1.1V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 250mA
Maximum Peak Reverse Repetitive Voltage Vrrm 300V

Key Features

  • Single diode configuration providing reliable switching performance.
  • Mount type is surface mount with compact SOD-523 package.
  • Maximum power dissipation rating of 500 mW enables efficient handling of small signals.
  • Peak reverse recovery time is 4 nanoseconds supporting high switching speeds.
  • Operates in a temperature range from -65°C up to 150°C for reliable performance.
  • Low maximum forward voltage of 1.1 V improves efficiency in circuits.
  • Handles transient surge currents up to 4.5 A for robustness.
  • Manufactured in China with new product condition.

Product Description

Nexperia BAS521,115 Silicon Junction Switching Diode is a compact 2-pin surface mount diode in the SOD-523 package designed for small signal switching applications. It supports a maximum forward current of 250 mA and withstands peak reverse voltages up to 300 V, making it suitable for various low power electronic circuits.

This diode features a robust construction with a maximum power dissipation of 500 mW and a fast peak reverse recovery time of 4 ns, ensuring efficient switching performance in industrial and commercial electronics. It operates reliably within a temperature range of -65°C to 150°C, suitable for demanding environments.

The compact physical dimensions of length 1.25 mm, width 0.85 mm, and height 0.65 mm allow high-density PCB layouts. With a low forward voltage of 1.1 V and the ability to handle non-repetitive forward surge currents up to 4.5 A, this diode offers flexibility and durability in semiconductor switching functions.

Single diode configuration for switching applications. Surface mount type in SOD-523 package. Maximum forward current: 250 mA. Maximum peak reverse voltage: 300 V. Power dissipation: 500 mW with fast switching. Operating temperature range: -65°C to 150°C.

Package dimensions: 1.25 mm length, 0.85 mm width, 0.65 mm height. Low forward voltage of 1.1 V. Surge current capability of 4.5 A. Manufactured in China with new product condition.

This diode is widely used in the electronics industry for signal switching, power management, and discrete semiconductor functions including use in power connectors, industrial electronic components, and high-density circuit designs. It enables low-leakage, high-voltage applications with rapid switching capabilities.

Explore other Switching Diodes from the Nexperia BAS521 series and related semiconductor products in the Electronics & Electricals category on EnvMart for comprehensive industrial solutions.

Nexperia Silicon Junction Switching Diode 2-Pin SOD-523 250 mA 300 V BAS521,115
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Frequently Asked Questions

The maximum forward current for this model is 250 mA.

It can withstand peak reverse voltages up to 300 V.

The maximum power dissipation rating is 500 mW.

This diode is packaged in a compact SOD-523 type.

It operates reliably within a temperature range of -65°C to 150°C.

The peak reverse recovery time is 4 nanoseconds.

The dimensions are 1.25 mm in length, 0.85 mm in width, and 0.65 mm in height.

The maximum forward voltage drop is 1.1 V.

It can handle non-repetitive forward surge currents up to 4.5 A.

It features a single diode configuration.

This diode is commonly used in signal switching, power management, and discrete semiconductor functions.

It is manufactured in China.

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