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ROHM P-Channel MOSFET Type RQ5H020SPTL, 2 A, 45 V, Enhancement Mode, 3-Pin TSMT Surface Mount

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ROHM P-Channel MOSFET Type RQ5H020SPTL, 2 A, 45 V, Enhancement Mode, 3-Pin TSMT Surface Mount

Name: ROHM P-Channel MOSFET Type RQ5H020SPTL, 2 A, 45 V, Enhancement Mode, 3-Pin TSMT Surface Mount
Brand: ROHM
SKU: 301412
Price: 0.4 USD
Availability: InStock

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Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	950μm
Length	3mm
Model	RQ5H020SPTL
Width	1.8mm
Mount Type	Surface
Series	RQ5H020SP
Maximum Operating Temperature	150°C
Package Type	TSMT
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	2A
Maximum Drain Source Voltage Vds	45V
Maximum Drain Source Resistance Rds	280mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1W
Typical Gate Charge Qg @ Vgs	9.5nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.2V
ROHM RSR020P05 P-Channel MOSFET, 2 A, 45 V, 3-Pin SOT-346T RQ5H020SPTLBrand	ROHM

Key Features

Features a 3-pin TSMT surface mount package for compact PCB mounting.
Maximum power dissipation rated at 1 W suitable for efficient heat management.
Enhancement mode channel ensures high performance switching and amplification.
Wide operating temperature range from -55°C to 150°C for reliable industrial use.
Low maximum drain-source resistance of 280 mΩ reduces conduction losses.
Typical gate charge of 9.5 nC provides effective gate control.
Capable of withstanding gate-source voltage from -20 V to +20 V.
Forward voltage of -1.2 V enhances device efficiency in circuits.

Product Description

ROHM RQ5H020SPTL is a P-Channel enhancement mode MOSFET designed for surface mount applications. It supports a maximum continuous drain current of 2 amperes and a drain-source voltage of up to 45 volts. The device features a low on-resistance of 280 milliohms, making it suitable for power-efficient switching tasks. The compact 3-pin TSMT package allows for effective mounting on densely packed printed circuit boards.

This MOSFET operates reliably within a wide temperature range from -55 degrees Celsius to 150 degrees Celsius, making it ideal for various industrial, electronic, and power management applications. The typical gate charge of 9.5 nanocoulombs enables efficient gate drive performance while maintaining device responsiveness.

The forward voltage of -1.2 volts ensures minimal voltage drop, improving the overall efficiency of power circuits. Its gate-source voltage rating from -20 volts to +20 volts provides robust protection against gate oxide breakdown, enhancing device durability.

Dimensionally, the MOSFET has a length of 3 millimeters, width of 1.8 millimeters, and a height of 950 micrometers, contributing to a small footprint suitable for compact device designs.

Features a 3-pin TSMT surface mount package for efficient PCB integration. Maximum drain current of 2 A and drain-source voltage rated at 45 V. Enhancement mode operation for superior switching performance. Low on-resistance (280 mΩ) to minimize conduction losses.

Wide operating temperature range (-55°C to 150°C) for durable industrial performance. Typical gate charge of 9.5 nC for effective gate switching. Gate-source voltage tolerance from -20 V to +20 V for device protection. Compact dimensions optimized for space-limited applications.

Ideal for power management, switching, and amplification in electronics.

This ROHM MOSFET is suitable for use in industrial electronics, power supplies, and electronic equipment requiring reliable and efficient P-Channel switching. Its compact form factor supports integration in automated manufacturing and embedded system designs. EnvMart offers this semiconductor component for professional and industrial users requiring high-quality MOSFET performance.