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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IDDD20G65C6XTMA1 |
| Mount Type | Surface |
| Series | IDDD20G65C6 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | JEDEC (J-STD20 and JESD22) |
| Pin Count | 10 |
| Maximum Continuous Forward Current If | 20A |
| Peak Reverse Repetitive Voltage Vrrm | 650V |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 2μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 99A |
| Maximum Forward Voltage Vf | 1.25V |
Infineon IDDD20G65C6XTMA1 is a high-performance 650 V 20 A Schottky barrier diode designed for surface mount applications in demanding electronics environments. Packaged in a TO-263 10-pin Double DPAK (DDPAK) format, this device offers enhanced thermal management with top-side cooling technology, making it suitable for high power circuits such as PC power supplies, solar inverters, servers, and telecom equipment.
The diode features a best-in-class forward voltage of 1.25 V and excellent figure of merit (Qc x Vf), resulting in improved efficiency and lower power loss. With a peak non-repetitive surge current capacity of 99 A and a peak reverse current as low as 2 μA, the IDDD20G65C6XTMA1 is engineered for robust, reliable operation across a wide temperature range from -55°C to 175°C.
Its high dv/dt ruggedness of 150 V/ns ensures resistance against voltage spikes in high-frequency switching applications. Compliance with JEDEC J-STD20 and JESD22 standards underlines its quality and reliability for industrial and manufacturing use.
This Schottky diode is ideal for use in industrial and commercial power electronics, including high-performance switching mode power supplies, solar energy systems, telecommunications infrastructure, and automotive electronics, where low forward voltage drop and rapid switching are critical.
Surface mount TO-263 package with Double DPAK design for efficient heat dissipation. Maximum continuous forward current: 20 A. Peak reverse repetitive voltage: 650 V. Maximum forward voltage: 1.25 V. Peak non-repetitive forward surge current: 99 A.
Operating temperature range: -55°C to 175°C. Low peak reverse current of 2 μA. Meets JEDEC (J-STD20 and JESD22) standards. 10-pin configuration optimized for complex circuitry. Set includes one Schottky Barrier Diode with model IDDD20G65C6XTMA1, ready for easy insertion into machinery and electronics assembly, increasing production efficiency.
Explore the full range of Infineon Schottky diodes at EnvMart for high-quality semiconductor components suited for your industrial, laboratory, and electronic systems.
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