$0.30
$0.29
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
ROHM Type P, Type N-Channel MOSFET 4 A 30 V Surface Mount HUML2020L8 UT6MA2TCR
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | UT6MA2TCR |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | HUML2020L8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 70mΩ |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 4.3nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET features a maximum continuous drain current of 4 A.
- Maximum drain-source voltage is rated at 30 V for reliable operation.
- Low on-resistance of 70 mΩ reduces power losses during switching.
- Designed for surface mounting with HUML2020L8 small form factor package.
- Forward voltage is 1.2 V, enabling efficient conduction.
- Operates in a temperature range from -55°C to 150°C ensuring durability.
- Maximum gate-source voltage of 20 V supports control flexibility.
- Typical gate charge at Vgs is 4.3 nC for fast switching performance.
Product Description
ROHM UT6MA2TCR is a Type P, Type N-Channel MOSFET designed primarily for switching applications within electronic circuits. This component is packaged in a compact HUML2020L8 surface mount package, which suits high-density PCB layouts and automated manufacturing processes.
The device supports a maximum continuous drain current of 4 A and can withstand drain-source voltages up to 30 V, making it suitable for low-voltage power switching. Its low on-resistance of 70 mΩ reduces conduction losses, enhancing overall efficiency in power management.
Designed for reliable operation in demanding environments, the MOSFET operates over a broad temperature range from -55°C to 150°C. The gate-source voltage maximum of 20 V and typical gate charge of 4.3 nC facilitates precise gate control for rapid switching applications.
Additional features include a forward voltage of 1.2 V and power dissipation of 2 W, positioning this MOSFET well for medium power applications in industrial, automotive, and electronic device manufacturing sectors.
The component complies with RoHS directives and is free from lead plating, aligning with environmentally conscious manufacturing standards. This MOSFET delivers efficient power switching with low on-resistance. Its compact surface mount package supports modern circuit design requirements.
Wide operating temperature range ensures durability in industrial applications. RoHS compliant and lead-free ensuring environmental safety. Suitable for automated PCB assembly processes to enhance productivity.
This MOSFET is ideal for electronic component assemblers seeking reliable, efficient switching devices for industrial, automotive, and commercial applications. Explore more power semiconductor solutions in the Electronics & Electricals category on EnvMart.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 4 A.
This model has a maximum drain-source voltage rating of 30 V.
The on-resistance of this MOSFET is rated at 70 mΩ, which helps reduce power losses during switching.
It operates within a temperature range from -55°C to 150°C, ensuring reliability in various environments.
The typical gate charge at Vgs is 4.3 nC, facilitating fast switching performance.
The maximum gate-source voltage supported by this MOSFET is 20 V.
This component is packaged in a HUML2020L8 surface mount package, suitable for high-density PCB layouts.
The forward voltage for this model is 1.2 V, enabling efficient conduction.
This MOSFET has a maximum power dissipation of 2 W.
Yes, this component complies with RoHS directives and is free from lead plating, aligning with environmentally conscious standards.
It is suitable for medium power applications in industrial, automotive, and electronic device manufacturing sectors.
The country of origin for this MOSFET is India.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$0.26
$0.25
-3%
New
Recently Viewed Products
$0.30
$0.29
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent