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Nexperia Resistor-Equipped Transistor, NPN, 100 mA, 50 V, 3-Pin DFN1110D-3 PDTC124EQB-QZ

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model PDTC124EQB-QZ
Mount Type Surface
Series PDTC124E
Maximum Operating Temperature 150°C
Package Type DFN1110D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc 100mA
Transistor Configuration NPN
Maximum Transition Frequency ft 230MHz

Key Features

  • Supports a maximum DC collector current of 100 mA.
  • 3-pin DFN1110D-3 surface mount package for compact installations.
  • Maximum collector-emitter voltage rating of 50 V ensures reliable switching performance.
  • Built-in resistors simplify circuit design and reduce component count.
  • Operating temperature range from -55°C to 150°C for robust industrial use.
  • Maximum transition frequency of 230 MHz suitable for high-speed applications.
  • Complies with RoHS and automotive AEC-Q101 standards.
  • Low package height of 0.5 mm enables space saving in PCB layout.

Product Description

Nexperia PDTC124EQB-QZ resistor-equipped transistor is a compact, ultra-small NPN device housed in a 3-pin DFN1110D-3 plastic surface mount package with side-wettable flanks. It provides a maximum DC collector current of 100 mA and can withstand voltages up to 50 V collector-emitter. The built-in resistors integrated within the transistor simplify circuit design and reduce the overall component count, improving production efficiency and lowering costs.

This transistor offers a maximum transition frequency of 230 MHz, making it suitable for high-speed digital switching and signal processing applications. Its operating temperature range of -55°C to 150°C ensures reliable performance in varied environmental conditions, supporting automotive standard AEC-Q101 compliance and RoHS environmental directives.

The device features a low 0.5 mm package height, enhancing board space efficiency, and is compatible with automatic optical inspection (AOI) for solder joint quality assurance. Typical applications include controlling IC inputs, switching loads, and serving as a cost-effective alternative to the BC857 series in digital circuits.

Maximum DC collector current of 100 mA. 3-pin DFN1110D-3 leadless surface mount package. Maximum collector-emitter voltage rating of 50 V. Built-in resistors to simplify design. Wide operating temperature range from -55°C to 150°C.

230 MHz maximum transition frequency for high-speed use. RoHS and automotive AEC-Q101 compliant. Low profile package height of 0.5 mm.

This transistor is ideal for industrial electronics, automotive systems, telecommunications, consumer electronics, and other digital switching applications. Its small size, integrated resistors, and robust electrical characteristics make it an excellent component in demanding environments.

Explore more semiconductor and transistor products on EnvMart for your engineering and production needs.

Explore more products in our Bipolar Transistors category.

Nexperia Resistor-Equipped Transistor, NPN, 100 mA, 50 V, 3-Pin DFN1110D-3 PDTC124EQB-QZ
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

This transistor has a maximum collector-emitter voltage rating of 50 V.

It operates within a temperature range from -55°C to 150°C.

The maximum transition frequency is 230 MHz, suitable for high-speed applications.

It is housed in a 3-pin DFN1110D-3 surface mount package.

Yes, it complies with RoHS and automotive AEC-Q101 standards.

The pin count for this model is 3.

The minimum DC current gain (hFE) is 60.

It is suitable for applications such as controlling IC inputs, switching loads, and digital circuits.

The package height is low at 0.5 mm, enhancing board space efficiency.

This model uses an NPN transistor configuration.

The maximum emitter-base voltage (VEBO) is 10 V.

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