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| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Model | MSC080SMA120B4 |
| Mount Type | Through Hole |
| Series | MSC080SMA120B4 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 140A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 8Ω |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 64nC |
| Maximum Gate Source Voltage Vgs | 2V |
| Forward Voltage Vf | 1.8V |
Microchip MSC080SMA120B4 is an advanced N-Channel MOSFET designed to deliver high current handling capability of up to 140 A and a maximum drain-source voltage of 12 V, making it suitable for demanding power electronics applications.
This MOSFET is encapsulated in a robust 4-pin TO-247 through-hole package that facilitates easy mounting in various industrial PCB assemblies.
The device offers a maximum drain-source resistance (Rds) of 8 ohms, minimizing conduction losses and enhancing power efficiency. It features a typical gate charge of 64 nC which ensures fast switching and minimal switching losses, critical for high frequency operations.
Operating temperature ratings are broad, from -55°C minimum up to 175°C maximum, supporting stable function in harsh environments. The maximum power dissipation is rated at 1.6 W, enabling reliable thermal performance during operation.
Microchip’s MSC080SMA120B4 includes a forward voltage of 1.8 V and a gate-source voltage maximum of 2 V, which contribute to its stable and efficient operation. The device is RoHS compliant, meeting essential environmental requirements.
This MOSFET proves suitable for industrial, power management, and automotive electronics sectors where robust switching performance and energy efficiency are paramount. It combines silicon carbide technology for enhanced performance over traditional silicon MOSFETs.
Through-hole 4-pin TO-247 package for reliable mounting. Maximum continuous drain current of 140 A for high power applications. Low typical gate charge of 64 nC enabling fast switching. Wide operating temperature range ensures durability.
Low drain-source resistance reduces power losses. RoHS compliance meets environmental standards. Suitable for industrial and automotive uses. Robust design for stable performance at high temperatures. Compact footprint for space-efficient circuit designs.
Enhances efficiency and reduces total cost of ownership. Explore more advanced semiconductor components and power devices in the Electronics & Electricals category of EnvMart for industrial and laboratory applications.
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