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| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Model | MSC025SMA120B4 |
| Mount Type | Through Hole |
| Series | MSC025SMA120B4 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 140A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 8Ω |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 232nC |
| Maximum Gate Source Voltage Vgs | 2V |
| Forward Voltage Vf | 1.8V |
Microchip MSC025SMA120B4 is a high-performance N-Channel MOSFET designed for power applications, featuring a 140 A continuous drain current and a drain-source voltage of 12 V. Packaged in a 4-pin TO-247 through-hole package with a source sense lead, this device offers a combination of low capacitances and low gate charge which translates to fast switching speeds and reduced power losses.
Its silicon carbide construction enhances ruggedness and efficiency over conventional silicon MOSFETs, allowing operation at high junction temperatures up to 175 °C. The device exhibits a maximum power dissipation rating of 1.6 W, supporting reliable performance during demanding power switching operations.
This MOSFET features an 8 Ω maximum drain-source resistance and a typical gate charge of 232 nC at Vgs, promoting efficient control and fast switching transitions. Its forward voltage drop of 1.8 V enhances conduction efficiency. With operating temperature capability from -55 °C to 175 °C, this component is suitable for varied industrial, automotive, and power management use cases.
Designed to meet RoHS compliance, the MSC025SMA120B4 supports environmentally friendly electronics manufacturing standards. Its robust construction and electrical characteristics make it ideal for industrial power electronics, high voltage switching, and conversion applications.
This MOSFET features a maximum power dissipation of 1.6 W for efficient operation. Its low gate charge of 232 nC and low internal gate resistance enable fast switching speeds. The device operates stably at high junction temperatures up to 175 °C.
Forward voltage is 1.8 V, ensuring efficient conduction. Designed with low capacitance for improved performance in high voltage applications. It supports through-hole mounting for easy integration into circuits. The package type is TO-247 with 4 pins, including a source sense lead.
The MOSFET is RoHS compliant, suitable for environmentally conscious designs. Operating temperature range spans from -55 °C to 175 °C, enabling use in harsh environments.
Explore a wide range of Microchip semiconductor products and other high-quality MOSFETs in EnvMart's Electronics & Electricals category to fulfill your design and production requirements.
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