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| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Model | MSC025SMA120B4 |
| Mount Type | Through Hole |
| Series | MSC025SMA120B4 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 140A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 8Ω |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 232nC |
| Maximum Gate Source Voltage Vgs | 2V |
| Forward Voltage Vf | 1.8V |
Microchip MSC025SMA120B4 is a high-performance N-Channel MOSFET designed for high current and voltage applications in electronic power circuits. Rated for a maximum continuous drain current of 140 A and a maximum drain-source voltage of 12 V, this device is housed in a robust 4-pin TO-247 package suitable for through-hole mounting.
This silicon carbide MOSFET offers advantages over traditional silicon MOSFETs and IGBTs by providing lower total cost of ownership and improved performance in power electronics. The device features low internal gate resistance, which contributes to fast switching speeds and efficiency during operation.
The MOSFET maintains stable functionality at high junction temperatures up to 175 °C, ensuring reliability in demanding environments. Its forward voltage of 1.8 V and typical gate charge of 232 nC support efficient operation with minimal losses.
Additional benefits include a superior avalanche ruggedness characteristic and a reliable body diode performance, making this MOSFET suited for applications requiring high durability and robustness. It complies with RoHS directives, supporting environmentally responsible manufacturing.
Typical uses for the MSC025SMA120B4 include industrial power supplies, motor drives, inverters, and other electronic circuits requiring efficient power switching and control. Its through-hole mounting format and TO-247 package make it compatible with various PCB designs and assembly methods.
Supports a maximum continuous drain current of 140 A for high power applications. Maximum drain-source voltage of 12 V ensures safe operation within specified limits. Designed with a low internal gate resistance enabling fast switching speed.
Capable of stable operation at junction temperatures up to 175°C for durability. Features a forward voltage of 1.8 V and typical gate charge of 232 nC for efficient switching. Compliant with RoHS standards, ensuring environmental safety.
The through-hole mount type and TO-247 package allow easy installation on PCBs. Utilizes silicon carbide technology for superior avalanche ruggedness and reliable body diode performance. Explore more products in the MOSFET category to find suitable power electronic components for your industrial, automotive, or commercial applications at EnvMart.
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