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ROHM N-Channel MOSFET, 6 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin SOP Surface Mount SP8K2HZGTB
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | SP8K2HZGTB |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOP |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 30mΩ |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 7.2nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- The MOSFET features a maximum continuous drain current of 6 amperes.
- It supports a maximum drain-source voltage of 30 volts.
- The device package is a compact 8-pin Small Outline Package (SOP) suitable for surface mount technology.
- Maximum drain-source resistance is very low at 30 milliohms, optimizing performance.
- The device has a maximum power dissipation capacity of 2 watts.
- It supports a typical gate charge of 7.2 nanocoulombs at a gate-source voltage of 20 volts.
- Operating temperature ranges from -55°C to 150°C, suitable for automotive and industrial environments.
- The MOSFET includes an integrated ESD protection diode for enhanced device reliability.
Product Description
The ROHM SP8K2HZGTB is an automotive-grade N-Channel MOSFET designed for efficient and reliable switching applications within the voltage and current limits of 30 volts and 6 amperes respectively. Packaged in a compact 8-pin Small Outline Package (SOP), it is optimized for surface mount technology on printed circuit boards.
This MOSFET offers a low on-resistance of 30 milliohms and a maximum power dissipation of 2 watts, ensuring minimal power loss and heat generation during operation. Its typical gate charge of 7.2 nanocoulombs at 20 volts gate voltage allows effective switching with reduced energy consumption.
Designed to operate reliably across a wide temperature range from -55°C up to 150°C, the SP8K2HZGTB supports automotive and industrial electronic environments. It includes an integrated electrostatic discharge (ESD) protection diode to safeguard against transient voltage spikes.
The compact SOP package combines small size with Pb-free lead plating, making it compliant with RoHS and halogen-free standards. It meets the stringent AEC-Q101 qualification, underscoring suitability for automotive electronics.
The MOSFET is ideal for switching and power management in automotive, industrial control systems, consumer electronics, and other high-reliability applications. Its surface mount compatibility aids in automated assembly and compact PCB designs.
The SP8K2HZGTB simplifies design considerations with its built-in protection and wide operating temperature. Manufacturers and designers can utilize datasheets, 3D models, schematics, and footprints available for seamless integration.
It supports enhanced product lifecycles due to its robust package and compliance with environmental standards.
This product is listed under the MOSFET category within discrete semiconductors, offering a reliable solution for electronic component needs in heavy-duty and specialized applications. Explore analogous products and detailed technical documents on EnvMart for comprehensive sourcing and design assistance.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 6 amperes.
This model supports a maximum drain-source voltage of 30 volts.
The MOSFET is packaged in a compact 8-pin Small Outline Package (SOP) suitable for surface mount technology.
The maximum power dissipation capacity is 2 watts.
It operates within a temperature range of -55°C to 150°C.
The typical gate charge at a gate-source voltage of 20 volts is 7.2 nanocoulombs.
Yes, it includes an integrated electrostatic discharge (ESD) protection diode for enhanced reliability.
The maximum gate-source voltage for this device is 20 volts.
The maximum drain-source resistance is very low at 30 milliohms.
This model complies with RoHS standards and meets the AEC-Q101 qualification for automotive electronics.
It is suitable for switching and power management in automotive, industrial control systems, and consumer electronics.
The country of origin for this MOSFET is India.
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