$8.77
$8.50
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
onsemi Insulated-Gate Bipolar Transistor IGBT 650 V, 75 A, TO-247-3L Surface Mount FGHL75T65LQDT
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.82mm |
| Length | 15.87mm |
| Model | FGHL75T65LQDT |
| Width | 20.82mm |
| Mount Type | Surface |
| Series | FGHL75T65LQDT |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247-3L |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Power Dissipation Pd | 469W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Features a maximum collector-emitter voltage of 650 V and maximum power dissipation of 469 W.
- Three-pin configuration optimized for surface mounting with TO-247-3L package.
- Operates reliably in temperatures ranging from -55°C to 175°C.
- Suitable for solar inverters, UPS systems, EV charging stations, and energy storage systems.
- Offers low conduction losses and efficient paralleling operation due to positive temperature coefficient.
- Complies with RoHS standards for environmental safety.
- Maximum gate-emitter voltage rating of 20 V ensures robust control characteristics.
Product Description
onsemi FGHL75T65LQDT Insulated-Gate Bipolar Transistor (IGBT) operates at a maximum collector-emitter voltage of 650 V with a continuous collector current up to 75 A. This IGBT utilizes a TO-247-3L surface mount package, providing robust thermal and electrical performance suitable for demanding power conversion systems.
The device features a positive temperature coefficient, enabling easy paralleling and improved system reliability, making it ideal for applications requiring efficient and controlled switching.
Operating temperature ranges from -55°C to 175°C allow this transistor to function reliably in harsh industrial and commercial environments, including solar inverters, uninterruptible power supplies (UPS), electric vehicle charging stations, and energy storage systems.
With maximum power dissipation of 469W and a gate-emitter voltage rating of ±20V, the FGHL75T65LQDT delivers optimized on-state voltage drop (Vce(sat)) and switch-off losses (Eoff), balancing conduction loss and switching performance for enhanced efficiency.
The package measures 15.87 mm in length, 20.82 mm in width, and 4.82 mm in height, facilitating integration into compact PCB layouts. Compliance with RoHS directives ensures environmentally responsible manufacturing.
Maximum collector-emitter voltage: 650 V. Maximum collector current: 75 A. Maximum power dissipation: 469 W. Operating temperature range: -55°C to 175°C. Package type: TO-247-3L surface mount. Pin count: 3. Maximum gate-emitter voltage: 20 V.
Positive temperature co-efficient for easy paralleling. Low conduction losses for high efficiency. Suitable for solar, UPS, EV charging, and ESS applications. Explore our extensive range of power semiconductor devices in the Electronics & Electricals category at EnvMart for your industrial and commercial power conversion needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum collector-emitter voltage of the FGHL75T65LQDT IGBT is 650 V.
This model has a continuous collector current rating of up to 75 A.
The maximum power dissipation for this IGBT is 469 W.
It operates reliably within a temperature range of -55°C to 175°C.
The FGHL75T65LQDT uses a TO-247-3L surface mount package.
The maximum gate-emitter voltage rating for this model is ±20 V.
This IGBT measures 15.87 mm in length, 20.82 mm in width, and 4.82 mm in height.
It is suitable for applications such as solar inverters, UPS systems, EV charging stations, and energy storage systems.
Yes, it complies with RoHS standards for environmental safety.
The FGHL75T65LQDT has a pin count of 3.
It features a positive temperature coefficient, which enables easy paralleling and improved system reliability.
The country of origin for this IGBT is India.
Related Products
$16.85
$16.35
-3%
New
Other Products from this brand
$6.78
$6.57
-3%
New
$23.16
$20.22
-12.7%
New
$8.77
$8.50
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent