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onsemi IGBT 650 V 3-Pin TO-247-3L Surface Mount FGHL50T65MQDT
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.82mm |
| Length | 15.87mm |
| Model | FGHL50T65MQDT |
| Width | 20.82mm |
| Mount Type | Surface |
| Series | FGHL50T65MQDT |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247-3L |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Power Dissipation Pd | 268W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Maximum collector emitter voltage of 650 V ensures high voltage tolerance.
- Maximum power dissipation of 268 W supports efficient thermal management.
- Compact TO-247-3L package facilitates surface mount integration.
- Operates within temperature range from -55°C to 175°C for reliable performance.
- Low switching and conduction losses enhance device efficiency.
- Three pin count design aids in easy circuit implementation.
- Compatible for use in solar inverters, UPS systems, EV charging stations, and energy storage systems.
- Meets RoHS standards ensuring compliance with environmental and safety regulations.
Product Description
onsemi FGHL50T65MQDT is a high-performance insulated-gate bipolar transistor (IGBT) designed for power conversion applications requiring medium switching speed and optimum balance between saturation voltage (Vce(sat)) and turn-off energy (Eoff) losses. This 650 V voltage rated device features a 3-pin TO-247-3L surface mount package that is compact and suitable for industrial and commercial electronics designs.
The device operates efficiently with maximum power dissipation of 268 W and supports a wide operating temperature range from -55°C to 175°C, making it robust for diverse environmental conditions. Its maximum gate-emitter voltage rating is 20 V, allowing stable gate control. The physical dimensions include length 15.87 mm, width 20.82 mm, and height 4.82 mm.
This IGBT is ideally suited for solar photovoltaic inverters, uninterruptible power supplies (UPS), electric vehicle charging stations, and energy storage solutions (ESS), delivering low conduction and switching losses. The positive temperature coefficient ensures easy paralleling, enhancing its integration flexibility in power electronic designs.
Maximum collector emitter voltage: 650 V. Maximum power dissipation: 268 W. Package: TO-247-3L surface mount. Pin count: 3. Operating temperature range: -55°C to 175°C. Maximum gate emitter voltage: 20 V. Dimensions: 15.87 mm (L) x 20.82 mm (W) x 4.82 mm (H).
RoHS compliant. Suitable for solar inverters, UPS, EV charging stations, and ESS. Explore more semiconductor devices and power conversion components at EnvMart for your industrial, manufacturing, and technological solutions.
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Frequently Asked Questions
The maximum collector emitter voltage for this model is 650 V.
It has a maximum power dissipation rating of 268 W, supporting efficient thermal management.
This IGBT operates within a temperature range from -55°C to 175°C.
The dimensions of the TO-247-3L package are 15.87 mm in length, 20.82 mm in width, and 4.82 mm in height.
The maximum gate-emitter voltage rating is 20 V, allowing stable gate control.
This model is suitable for applications such as solar inverters, uninterruptible power supplies (UPS), electric vehicle charging stations, and energy storage systems.
It features a three-pin design, aiding in easy circuit implementation.
Yes, it meets RoHS standards, ensuring compliance with environmental and safety regulations.
This model supports surface mount integration, making it suitable for various electronic designs.
It belongs to the FGHL50T65MQDT series of insulated-gate bipolar transistors.
The positive temperature coefficient feature ensures easy paralleling, enhancing integration flexibility in power electronic designs.
The country of origin for this IGBT is India.
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