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STMicroelectronics Bipolar Transistor 30 A 600 V 3-Pin TO-3PF STTH30M06SPF

Category Bipolar Transistor Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 8mm
Length 16mm
Model STTH30M06SPF
Width 10mm
Mount Type Through Hole
Series STTH30M06S
Maximum Operating Temperature 175°C
Package Type TO-3PF
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 600V
Maximum DC Collector Current Idc 30A

Key Features

  • Ultrafast recovery enhances efficiency in high-frequency switching circuits.
  • Low power losses enable better performance and heat management.
  • Low leakage current supports reliability in power applications.
  • Designed to withstand high junction temperatures up to 175°C.
  • Robust electrostatic discharge and overcurrent capabilities for heavy-duty use.
  • Through-hole mount with TO-3PF package for secure installation.
  • Compact dimensions with length 16 mm, width 10 mm, height 8 mm.
  • Operates at temperatures ranging from -65°C to 175°C.

Product Description

STMicroelectronics STTH30M06SPF Bipolar Transistor is a high-voltage, high-current device designed for robust operation in industrial and power electronics applications. Featuring a maximum DC collector current of 30 A and a collector-emitter voltage rating of 600 V, this transistor is optimized for ultrafast recovery and soft recovery behaviors, making it ideal for boost or LLC clamping circuits operating at high switching frequencies.

The transistor's design supports low power losses and low leakage current, contributing to enhanced system efficiency and reliability. It can withstand a broad operating temperature range from -65°C to 175°C, ensuring stable performance in harsh environments such as telecom power supplies, air conditioning equipment, and other heavy-duty industrial systems.

Mounted in a TO-3PF package with a through-hole installation type, the device measures 16 mm in length, 10 mm in width, and 8 mm in height, providing a compact footprint for PCB layouts. It complies with RoHS directives, confirming its environmental compatibility.

Ultrafast recovery and soft recovery characteristics. Low leakage current for better power efficiency. High junction temperature tolerance up to 175°C. Robust against electrostatic discharge and high overcurrent stress. Suitable for boost or LLC clamping circuits at high switching frequencies.

TO-3PF package with through-hole mounting. Compact dimensions facilitating integration into power modules.

This transistor serves key roles in industrial power supplies, HVAC systems, telecommunications infrastructure, and other electronic assemblies requiring reliable fast switching semiconductors. Its robust construction and thermal endurance ensure operational longevity under demanding conditions.

Explore more high-quality Bipolar Transistors and related semiconductor components within the Electronics & Electricals category at EnvMart, your premier industrial catalog.

STMicroelectronics Bipolar Transistor 30 A 600 V 3-Pin TO-3PF STTH30M06SPF
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Frequently Asked Questions

The maximum collector-emitter voltage rating of this transistor is 600 V.

This model has a maximum DC collector current of 30 A.

The dimensions of the TO-3PF package are 16 mm in length, 10 mm in width, and 8 mm in height.

It operates within a temperature range of -65°C to 175°C.

This model uses a through-hole mounting type.

Key features include ultrafast recovery, low leakage current, high junction temperature tolerance, and robust electrostatic discharge capabilities.

Yes, it complies with RoHS directives, confirming its environmental compatibility.

It is suitable for industrial power supplies, HVAC systems, telecommunications infrastructure, and other electronic assemblies requiring reliable fast switching.

The pin count of this model is 3.

This transistor belongs to the STTH30M06S series.

It offers ultrafast recovery and soft recovery behaviors, which enhance efficiency in high-frequency switching circuits.

The country of origin for this transistor is India.

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