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Nexperia Bipolar PNP Transistor, Maximum DC Collector Current -100 mA, Collector Emitter Voltage -45 V, 3-Pin BC857BQCZ

Category Bipolar Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model BC857BQCZ
Mount Type Surface
Series BC857xQC
Maximum Operating Temperature 150°C
Package Type SOT-8009
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 220
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -6V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc -100mA
Transistor Configuration PNP

Key Features

  • This transistor supports a maximum DC collector current of -100 mA.
  • It features a maximum collector emitter voltage of -45 V suitable for medium voltage circuits.
  • The device is housed in a low profile SOT-8009 package with a 0.5 mm height for space-efficient PCB layouts.
  • Designed with surface mounting capabilities suitable for automated assembly processes.
  • The transistor configuration is PNP with a minimum DC current gain (hFE) of 220 for reliable amplification.
  • Operating temperature ranges from -55°C to 150°C, ensuring robustness in industrial environments.
  • It complies with RoHS standards and automotive standard AEC-Q101, ensuring quality and environmental compliance.
  • Pin count is 3, compatible with standard transistor circuits and automotive applications.

Product Description

The Nexperia BC857BQCZ is a bipolar PNP transistor designed for versatile electronic circuits requiring a reliable small-signal transistor. It features a maximum DC collector current of -100 mA and a maximum collector emitter voltage of -45 V, making it suitable for medium-power low-voltage applications.

Packaged in a space-saving SOT-8009 (DFN1412D-3) surface-mount device with side-wettable flanks, the transistor enables automatic optical inspection of solder joints and efficient PCB design with a low package height of 0.5 mm. This ultra-small SMD plastic package enhances production efficiency and reliability.

The transistor operates over a broad temperature range from -55°C to 150°C, fulfilling demanding industrial and automotive requirements. It features a high minimum DC current gain (hFE) of 220 which provides efficient signal amplification in various electronic systems.

Designed specifically for automatic manufacturing setups, the BC857BQCZ supports improved insertion and soldering performance. Its PNP configuration and 3-pin design provide compatibility with many circuit topologies in power management, signal amplification, and switching applications.

This transistor supports a maximum DC collector current of -100 mA. Maximum collector emitter voltage of -45 V for moderate voltage applications. Compact SOT-8009 package with a height of 0.5 mm reduces PCB footprint. Suitable for surface mount technology and automated optical inspection.

Minimum DC current gain (hFE) of 220 ensures high amplification efficiency. Wide operating temperature range from -55°C to 150°C enables use in harsh environments. Meets RoHS and automotive AEC-Q101 standards for quality and environmental safety.

3-pin device compatible with standard PNP transistor circuit designs.

This bipolar transistor is ideal for industrial, automotive, and general electronic applications where compact size, high reliability, and standardized quality certifications are mandatory.

Browse the Electronics & Electricals category at EnvMart for a wide range of semiconductor components including Bipolar Transistors for diverse electronic design needs.

Nexperia Bipolar PNP Transistor, Maximum DC Collector Current -100 mA, Collector Emitter Voltage -45 V, 3-Pin BC857BQCZ
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Frequently Asked Questions

The maximum DC collector current for this model is -100 mA.

The maximum collector emitter voltage is -45 V, making it suitable for medium voltage circuits.

This model has a minimum DC current gain (hFE) of 220, which ensures reliable amplification.

The operating temperature range is from -55°C to 150°C, suitable for harsh environments.

It is packaged in a SOT-8009 type, which is a surface-mount device with a low profile of 0.5 mm height.

The BC857BQCZ has a pin count of 3, compatible with standard transistor circuits.

This model complies with RoHS standards and the automotive standard AEC-Q101 for quality and environmental safety.

It is configured as a PNP transistor, suitable for various electronic applications.

The maximum emitter base voltage (VEBO) is -6 V.

The maximum collector base voltage (VCBO) is -50 V.

Yes, it is designed with surface mounting capabilities suitable for automated assembly processes.

The country of origin for this transistor is India.

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