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Nexperia Bipolar Transistor, PNP, Maximum DC Collector Current -100 mA, Maximum Collector Emitter Voltage -45 V BC857BQCZ

Category Bipolar Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model BC857BQCZ
Mount Type Surface
Series BC857xQC
Maximum Operating Temperature 150°C
Package Type SOT-8009
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 220
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -6V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc -100mA
Transistor Configuration PNP

Key Features

  • Maximum DC collector current of -100 mA ensures reliable switching performance.
  • Maximum collector emitter voltage rating of -45 V provides wide operating range.
  • Compact surface-mount device with 3-pin SOT-8009 package and low height of 0.5 mm.
  • Suitable for automated optical inspection of solder joints and smaller footprint compared to conventional SMD packages.
  • Wide operating temperature range from -55°C to 150°C enhances durability in harsh environments.
  • Transistor has a minimum DC current gain (hFE) of 220 for efficient amplification.
  • Meets automotive standard AEC-Q101 ensuring high reliability in automotive applications.
  • RoHS compliant for environmental safety.

Product Description

Nexperia BC857BQCZ is a PNP bipolar transistor designed for discrete semiconductor applications requiring reliable switching and amplification. It features a 3-pin SOT-8009 surface-mount package with a compact footprint and low profile of 0.5 mm height suitable for dense PCB layouts.

This transistor supports a maximum DC collector current rating of -100 mA and a maximum collector emitter voltage of -45 V, making it ideal for low power switching circuits and amplifier stages in various electronic devices.

The device operates reliably within a temperature range from -55°C to 150°C, ensuring durability for automotive and industrial applications. The minimum DC current gain (hFE) of 220 guarantees efficient current amplification.

Designed to meet the automotive AEC-Q101 qualification standard, this transistor is suitable for automotive electronic systems requiring high reliability and quality. It is also RoHS compliant, supporting environmentally friendly manufacturing practices.

The SOT-8009 package with side-wettable flanks provides excellent solder joint inspection capability under automated optical inspection (AOI) systems, facilitating high-quality PCB assembly processes.

Maximum DC collector current of -100 mA. Maximum collector emitter voltage of -45 V. 3-pin SOT-8009 surface-mount package with low height of 0.5 mm. AEC-Q101 automotive standard qualified. RoHS compliant and environmentally safe.

Minimum DC current gain (hFE) of 220. Wide operating temperature range from -55°C to 150°C. Suitable for automatic optical inspection (AOI) of solder joints. Ideal for automotive and industrial electronic applications.

This bipolar transistor is widely used in automotive, industrial, and consumer electronics for switching and amplification tasks in compact, surface-mounted PCB designs. Browse related Bipolar Transistors and discrete semiconductor components on EnvMart for more options by Nexperia and other reputed manufacturers.

Nexperia Bipolar Transistor, PNP, Maximum DC Collector Current -100 mA, Maximum Collector Emitter Voltage -45 V BC857BQCZ
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Frequently Asked Questions

The maximum DC collector current for this transistor is -100 mA.

It has a maximum collector-emitter voltage rating of -45 V.

This model comes in a 3-pin SOT-8009 surface-mount package.

The operating temperature range is from -55°C to 150°C.

The minimum DC current gain (hFE) is 220.

Yes, it is RoHS compliant, supporting environmentally friendly manufacturing practices.

It meets the automotive standard AEC-Q101, ensuring high reliability in automotive applications.

The SOT-8009 package has a low height of 0.5 mm, making it suitable for compact PCB layouts.

The maximum emitter-base voltage (VEBO) is -6 V.

This transistor is suitable for automotive, industrial, and consumer electronics for switching and amplification tasks.

The maximum collector-base voltage (VCBO) is -50 V.

It is a PNP bipolar transistor designed for discrete semiconductor applications.

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