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Nexperia Bipolar Transistor PNP 3-Pin DFN1110D-3, 500 mA, 45 V BC807-25QB-QZ

Category Bipolar Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model BC807-25QB-QZ
Mount Type Surface
Series BC807QB-Q
Maximum Operating Temperature 150°C
Package Type DFN1110D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 160
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc -500mA
Transistor Configuration PNP

Key Features

  • This PNP transistor features a maximum DC collector current of 500 mA.
  • It has a maximum collector emitter voltage of 45 V.
  • Contained in a compact DFN1110D-3 surface-mount package suitable for automated optical inspection.
  • The device operates within a temperature range of -55°C to 150°C.
  • It is AEC-Q101 qualified and RoHS compliant for automotive and industrial applications.
  • Offers three current gain selections to accommodate different circuit requirements.
  • The low 0.5 mm package height allows for a smaller footprint compared to conventional leaded transistors.
  • Ideal for use in power, switching, and signal amplification tasks.

Product Description

Nexperia BC807-25QB-QZ is a PNP bipolar transistor designed for reliable low power switching and amplification applications. Encased in a space-saving DFN1110D-3 (SOT8015) surface-mount package with side-wettable flanks, this transistor supports a maximum collector current of 500 mA and a collector emitter voltage of 45 V.

This transistor is designed for high power dissipation with a low-profile package height of 0.5 mm, enabling compact PCB layouts. Suitable for automated optical inspection (AOI) of solder joints, it aids in automated assembly processes.

With operating temperatures from -55°C to 150°C, it is ideal for automotive and industrial environments, boasting AEC-Q101 qualification and RoHS compliance. The device offers three current gain (hFE) selections, allowing designers flexibility in circuit tuning.

Typical applications include general-purpose switching, amplification in electronic circuits, and power management tasks in automotive and industrial electronic systems. This transistor supports a maximum DC collector current of 500 mA.

Maximum collector emitter voltage is 45 V. Package type is DFN1110D-3 with surface mount technology. AEC-Q101 qualified ensuring automotive standard compliance. Operating temperature ranges from -55°C to +150°C. RoHS compliant ensuring environmental safety.

Low profile package height of 0.5 mm. Three gain selections for circuit flexibility. Explore more electronic components and Bipolar Transistors at EnvMart for your industrial and commercial applications.

Nexperia Bipolar Transistor PNP 3-Pin DFN1110D-3, 500 mA, 45 V BC807-25QB-QZ
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Frequently Asked Questions

The maximum DC collector current of this PNP transistor is 500 mA.

This model has a maximum collector emitter voltage of 45 V.

It operates within a temperature range of -55°C to 150°C.

The transistor is contained in a DFN1110D-3 surface-mount package.

Yes, the BC807-25QB-QZ is RoHS compliant, ensuring environmental safety.

It is AEC-Q101 qualified, ensuring compliance with automotive standards.

This model features a 3-pin configuration.

The device offers three current gain (hFE) selections for circuit flexibility.

The minimum DC current gain (hFE) is 160.

The maximum emitter base voltage (VEBO) is -5 V.

It is suitable for general-purpose switching, amplification in electronic circuits, and power management tasks in automotive and industrial electronic systems.

The minimum operating temperature is -55°C.

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