onsemi PNP Darlington Transistor 50 A 120 V 2-Pin TO-204, HFE 400 MJ11033G

onsemi MJ11033G is a high-performance PNP Darlington transistor featuring a robust maximum continuous collector current of 50 A and a collector emitter voltage rating of 120 V. Its 2-pin TO-204 package is designed for through-hole mounting applications. This transistor delivers a minimum DC current gain (hFE) of 400, making it ideal for amplification and switching tasks in electronic circuits requiring significant load handling.

The component supports a maximum power dissipation of 300 W, ensuring reliable operation under demanding electrical loads. It is engineered to operate over a wide temperature range from -55°C up to 200°C, providing stable performance in diverse industrial and commercial environments.

Additional technical characteristics include a maximum emitter base voltage of 5 V and a collector base voltage of 120 V. The maximum collector emitter saturation voltage is 2.5 V, allowing efficient conduction during switching states. This transistor is suitable for industrial power control, amplifier circuits, and other high current applications requiring a reliable PNP Darlington device.

Operates with a minimum DC current gain (hFE) of 400. Configured in a 2-pin TO-204 package suitable for through-hole mounting. Offers maximum power dissipation of 300 W for high load capacity. Designed for high reliability with operating temperature range from -55°C to 200°C.

Maximum collector emitter saturation voltage of 2.5 V ensures efficient switching.

This onsemi MJ11033G transistor complies with quality standards but does not hold automotive or other certifications. It is ideal for use in electronic components design, power amplification, and switching circuits within semiconductor and power connector applications. Explore EnvMart’s Electronics & Electricals collection for a full range of Darlington Transistors and related components.