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Nexperia Bipolar Transistor PNP, -500 mA, -45 V, 3-Pin DFN1110D-3 BC807-25QB-QZ

Category Bipolar Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model BC807-25QB-QZ
Mount Type Surface
Series BC807QB-Q
Maximum Operating Temperature 150°C
Package Type DFN1110D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 160
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc -500mA
Transistor Configuration PNP

Key Features

  • Supports a maximum collector current of 500 mA.
  • Maximum collector-emitter voltage rating is 45 V.
  • Compact DFN1110D-3 leadless surface mount package.
  • Operates reliably between -55°C and 150°C.
  • Complies with RoHS and AEC-Q101 automotive standards.
  • High current gain hFE of minimum 160 for amplification.
  • PNP transistor polarity suitable for general applications.
  • Side-wettable flanks enable automatic optical inspection.

Product Description

Nexperia BC807-25QB-QZ Bipolar Transistor is a PNP configuration designed for surface mount technology in a DFN1110D-3 package. It supports a maximum DC collector current of 500 mA and a maximum collector-emitter voltage of 45 V, making it suitable for a wide range of electronic circuit applications including amplification and switching.

The transistor features a compact leadless SMD plastic package that includes side-wettable flanks to enable automatic optical inspection (AOI) of solder joints, ensuring high reliability in manufacturing environments. The device offers three current gain selections and excellent power dissipation characteristics, all while maintaining a low profile of 0.5 mm height and a smaller footprint compared to traditional leaded packages.

Designed to operate within a temperature range from -55°C minimum to 150°C maximum, this component is RoHS compliant and AEC-Q101 qualified, making it suitable for automotive and industrial applications where stringent quality and environmental standards are required.

The BC807-25QB-QZ is optimized for high current performance with a minimum DC current gain (hFE) of 160. Its PNP polarity allows its use in a variety of electronic designs including amplifiers and general-purpose switching circuits.

This transistor is ideal for industrial, automotive, and commercial electronics manufacturing, providing high reliability and precision in compact form. The surface mount package allows for efficient PCB design and automated assembly processes, enhancing production throughput.

Supports maximum collector current up to 500 mA. Rated collector-emitter voltage is 45 V. DFN1110D-3 surface mount package with side-wettable flanks. Wide operating temperature range from -55°C to 150°C. RoHS compliant and automotive-grade (AEC-Q101) qualified.

High gain PNP configuration for signal amplification and switching. Low profile 0.5 mm height package reduces PCB space usage. Suitable for industrial, automotive, and commercial electronics. Discover more components and solutions in the Electronics & Electricals category at EnvMart.

Nexperia Bipolar Transistor PNP, -500 mA, -45 V, 3-Pin DFN1110D-3 BC807-25QB-QZ
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Frequently Asked Questions

The maximum DC collector current for this model is -500 mA.

The maximum collector-emitter voltage rating is -45 V.

This transistor operates reliably between -55°C and 150°C.

It comes in a compact DFN1110D-3 leadless surface mount package.

The minimum DC current gain (hFE) is 160, suitable for amplification.

Yes, it is RoHS compliant and AEC-Q101 qualified for automotive applications.

This model features a PNP transistor configuration.

The DFN1110D-3 package has a low profile height of 0.5 mm, which helps reduce PCB space usage.

The maximum emitter-base voltage (VEBO) is -5 V.

This transistor is suitable for general applications including amplification and switching circuits.

The BC807-25QB-QZ has 3 pins.

The country of origin for this transistor is India.

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