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Nexperia Schottky Diode 40 V 500 mA Surface Mount 2-Pin SOD-323F PMEG4005EJ,115

Category Semiconductors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 0.8mm
Length 1.8mm
Model PMEG4005EJ,115
Width 1.35mm
Mount Type Surface
Series PMEG4005EJ
Maximum Operating Temperature 150°C
Package Type SOD-323F
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Continuous Forward Current If 500mA
Peak Reverse Repetitive Voltage Vrrm 40V
Diode Configuration Single
Rectifier Type Schottky
Peak Reverse Current Ir 100μA
Peak Non-Repetitive Forward Surge Current Ifsm 10A
Maximum Forward Voltage Vf 470mV
onsemi 40 V 250 mA Diode Schottky 2-Pin SOD-323 NSR0240HT1GBrand onsemi

Key Features

  • The diode features a single diode configuration and Schottky rectifier type optimized for low forward voltage drop.
  • It supports a peak non-repetitive forward surge current of up to 10 A.
  • Designed for high efficiency and low power switching losses with low leakage current.
  • Operating temperature ranges from -65°C to a maximum of 150°C.
  • Manufactured in China following industrial quality standards.
  • Pin count is 2, suitable for various electronic circuit applications.

Product Description

Nexperia PMEG4005EJ,115 is a Schottky barrier diode designed for efficient rectification in electronic circuits. This surface-mount device (SMD) utilizes a 2-pin SOD-323F package, making it suitable for compact and space-constrained PCB layouts.

The diode supports a maximum continuous forward current of 500 mA and a peak reverse repetitive voltage rating of 40 V, ensuring reliable performance in low power switching and rectifier applications. Its low forward voltage drop of 470 mV minimizes power dissipation and improves energy efficiency.

This Schottky diode offers a peak non-repetitive forward surge current of 10 A and operates across a wide temperature range from -65°C to 150°C, providing robustness in various industrial and commercial operating environments.

Physical dimensions are compact at 1.8 mm in length, 1.35 mm in width, and 0.8 mm in height, enabling use in densely packed electronic assemblies. The device’s low capacitance and minimal leakage current further enhance its performance in high-frequency switching circuits.

Typical applications include power conversion, voltage clamping, rectify low-voltage signals, and use in power management circuits for consumer electronics, automotive electronics (non-automotive standard), and instrumentation.

The diode features single diode configuration optimized for low forward voltage drop. Packaged in a thin, ultra-small SOD-323F surface mount package. Ensures high efficiency and low power switching losses. Reliable operation over a wide temperature range from -65°C to 150°C.

Peak non-repetitive surge current capability of 10 A. Manufactured in China with industrial-grade quality. Compact two-pin design facilitates PCB layout and assembly.

This Nexperia diode is ideal for integration in industrial electronics, telecommunications, power supply units, and switching power applications, meeting the demand for efficient and compact Semiconductors.

Explore further components and complementary products in the Schottky Diodes category at EnvMart to support your electronic design needs.

Nexperia Schottky Diode 40 V 500 mA Surface Mount 2-Pin SOD-323F PMEG4005EJ,115
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Frequently Asked Questions

The maximum continuous forward current for this model is 500 mA.

This diode has a peak reverse repetitive voltage rating of 40 V.

The operating temperature range for this unit is from -65°C to a maximum of 150°C.

The maximum forward voltage drop for this diode is 470 mV.

This model comes in a SOD-323F package type, which is suitable for surface mounting.

The peak non-repetitive forward surge current capability of this diode is 10 A.

The physical dimensions of this unit are 1.8 mm in length, 1.35 mm in width, and 0.8 mm in height.

This model features a single diode configuration optimized for low forward voltage drop.

Typical applications include power conversion, voltage clamping, and rectifying low-voltage signals in power management circuits.

The peak reverse current for this model is 100 μA.

This diode is manufactured in China.

This diode is designed for high efficiency and low power switching losses, with low leakage current, making it suitable for various electronic circuit applications.

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