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| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RW4E045ATTCL1 |
| Mount Type | Surface |
| Series | RW4E045AT |
| Maximum Operating Temperature | 150°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 7 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 480mΩ |
| Channel Mode | P |
| Maximum Power Dissipation Pd | 1.5W |
| Typical Gate Charge Qg @ Vgs | 11nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
ROHM RW4E045ATTCL1 is a high-performance Type P-Channel MOSFET designed for efficient switching applications. It supports a maximum continuous drain current of 4.5 A and a maximum drain-source voltage of 30 V in a compact, surface-mount 7-pin DFN package. The device features a low on-resistance of 480 milliohms, which reduces conduction losses and enhances power efficiency.
The typical gate charge of 11 nC at Vgs = 11 V allows for rapid switching, making it suitable for high-speed applications. It has a maximum power dissipation of 1.5 W and can reliably operate within a temperature range from -55°C to 150°C, ensuring durability in challenging industrial environments.
This MOSFET is RoHS compliant and employs lead-free plating, aligning with current environmental and safety regulations. It is engineered primarily for surface mounting with a 7-pin DFN package, enabling compact PCB designs.
Applications of the ROHM RW4E045ATTCL1 include power management in consumer electronics, industrial control systems, and other environments requiring efficient, small-form-factor switching components.
Designed for surface mounting with 7-pin DFN package. Maximum continuous drain current of 4.5 amperes ensures efficient operation. Maximum drain-source voltage of 30 volts suitable for low-voltage applications. Low on-resistance of 480 milliohms minimizes power losses.
Typical gate charge of 11 nanocoulombs enables fast switching performance. Maximum power dissipation rated at 1.5 watts allows stable thermal operation. Wide operating temperature range from -55°C to 150°C for reliability in harsh conditions.
Gate-source voltage rating up to ±20 volts protects against voltage spikes. RoHS compliant and lead-free plating supporting environmental standards. Ideal for switching applications requiring small mold, high power handling.
This component is suitable for industrial, electronic consumer devices, and power management applications. Browse the Electronics & Electricals category for more semiconductor solutions and power MOSFETs at EnvMart.
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