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onsemi NPN Darlington Transistor 300 mA 30 V 5000 hFE 3-Pin SOT-23 MMBTA13LT1G

Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.01mm
Length 3.04mm
Model MMBTA13LT1G
Mount Type Surface
Series MMBTA13LT1
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Continuous Collector Current Ic 300mA
Maximum Collector Emitter Voltage Vceo 30V
Number of Elements per Chip 2
Minimum DC Current Gain hFE 5000
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V
Maximum Collector Base Voltage VCBO 30V
Maximum Collector Cut-off Current 100nA
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
onsemi MMBTA13LT1G 2 Darlington Transistor NPN, 300 mA 30 V HFE 5000, 3-Pin SOT-23

Key Features

  • High minimum DC current gain of 5000 for superior amplification.
  • Compact 3-pin SOT-23 surface mount package enabling easy PCB integration.
  • Maximum power dissipation rated at 300 mW ensures reliable operation.
  • Wide operating temperature range from -55°C to 150°C suits various environments.
  • Meets AEC-Q101 automotive standard for enhanced reliability.
  • Low collector emitter saturation voltage of 1.5 V minimizes power loss.
  • Designed with 2 transistor elements per chip in a Darlington configuration.
  • Maximum collector cutoff current of 100 nA prevents leakage.

Product Description

onsemi MMBTA13LT1G is a high-performance NPN Darlington transistor with a maximum continuous collector current of 300 mA and a maximum collector emitter voltage of 30 V. It features a minimum DC current gain (hFE) of 5000, making it ideal for applications requiring high amplification.

This transistor is housed in a compact 3-pin SOT-23 surface mount package, facilitating integration in dense PCB layouts and automated assembly. The device supports a maximum power dissipation of 300 mW and can operate reliably across a wide temperature range from -55°C up to 150°C, meeting stringent industrial requirements.

The product complies with the AEC-Q101 automotive standard, ensuring robustness and reliability in automotive systems. Its low collector emitter saturation voltage of 1.5 V contributes to high efficiency and reduced power loss.

The transistor consists of two transistor elements combined in a Darlington configuration to achieve superior gain performance. It has a maximum emitter base voltage of 10 V and maximum collector base voltage of 30 V. The maximum collector cutoff current is 100 nA, minimizing leakage currents in circuits.

Common use cases for the onsemi MMBTA13LT1G include automotive electronics, industrial control systems, power management circuits, and switching applications in electronic devices.

High minimum DC current gain of 5000 for superior amplification. Compact 3-pin SOT-23 surface mount package enabling easy PCB integration. Maximum continuous collector current of 300 mA for medium power applications. Wide operating temperature range from -55°C to 150°C for harsh environments.

AEC-Q101 automotive standard qualified for reliable automotive use. Maximum power dissipation of 300 mW ensures thermal safety. Low collector emitter saturation voltage contributes to efficiency. Surface mount package suitable for automated mounting processes.

Two transistor elements per chip provide Darlington gain configuration. Ideal for electronics, automotive, industrial, and power switching applications. Explore onsemi Darlington Transistors and other semiconductor components in the Electronics & Electricals category at EnvMart for high-quality, reliable industrial-grade parts.

onsemi NPN Darlington Transistor 300 mA 30 V 5000 hFE 3-Pin SOT-23 MMBTA13LT1G
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Frequently Asked Questions

The maximum continuous collector current for this model is 300 mA.

It has a minimum DC current gain (hFE) of 5000, providing superior amplification.

The maximum collector emitter voltage is 30 V.

This model has a height of 1.01 mm and a length of 3.04 mm.

It operates reliably within a wide temperature range from -55°C to 150°C.

It comes in a compact 3-pin SOT-23 surface mount package.

The maximum power dissipation is rated at 300 mW.

Yes, it complies with the AEC-Q101 automotive standard for enhanced reliability.

The maximum collector cutoff current is 100 nA, which helps minimize leakage.

This transistor consists of two transistor elements per chip in a Darlington configuration.

The maximum collector base voltage is 30 V.

The maximum emitter base voltage is 10 V.

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