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Infineon NPN RF Bipolar Transistor, 40 mA Collector Current, 4 V Collector Emitter Voltage, 4-Pin TSLP BFR740L3RHE6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BFR740L3RHE6327XTSA1 |
| Mount Type | Surface |
| Series | BFR740L3RH |
| Maximum Operating Temperature | 150°C |
| Package Type | TSLP |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | JEDEC47/20/22 |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 4V |
| Minimum DC Current Gain hFE | 160 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 1.2V |
| Maximum Collector Base Voltage VCBO | 13V |
| Maximum Power Dissipation Pd | 160mW |
| Maximum DC Collector Current Idc | 40mA |
| Maximum Transition Frequency ft | 42GHz |
| The Infineon BFP740L3RH is a Silicon Germanium Carbon (SiGe | C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) |
Key Features
- Maximum DC collector current of 40 mA ensures efficient signal amplification.
- Low profile 4-pin TSLP package supports compact surface mount designs.
- Maximum collector emitter voltage of 4 V suitable for RF applications.
- High transition frequency of up to 42 GHz allows for wideband Radio Frequency operations.
- Low noise figure supporting improved signal integrity at GHz frequencies.
- Operational temperature range from -55°C to 150°C for harsh environments.
- Delivered in a reliable surface mount package with 4 pins for easy circuit integration.
Product Description
The Infineon BFR740L3RHE6327XTSA1 is a high-performance NPN RF Bipolar Transistor built with Silicon Germanium Carbon (SiGe:C) Heterojunction wideband technology. It is designed for demanding RF electronic applications requiring low noise and wide frequency response.
This transistor supports a maximum DC collector current of 40 mA and a collector emitter voltage rating of 4 V, making it suitable for low power RF amplification tasks. Its leadless 4-pin Thin Small Outline Package (TSLP) facilitates surface mounting, enabling compact printed circuit board layouts.
With a maximum transition frequency (ft) of 42 GHz, it is capable of high-frequency operation in wideband RF circuits. It exhibits a low noise figure, maintaining NFmin levels of 0.5 dB at 1.9 GHz and 0.8 dB at 5.5 GHz delivering superior signal quality.
Designed to operate over a wide temperature range (-55°C to 150°C), this transistor assures reliable performance in industrial, telecommunications, and military grade RF equipment. The device complies with JEDEC standards 47, 20, and 22 for quality assurance.
Its typical applications include RF amplification, mixers, and oscillator circuits in wireless communications, instrumentation, and defense electronics. Maximum DC collector current of 40 mA. Maximum collector emitter voltage of 4 V.
Surface mount 4-pin TSLP package offering low profile design. Low noise figure for improved radio signal clarity. High maximum transition frequency of 42 GHz. Wide operating temperature range from -55°C to 150°C. Compliance with JEDEC standards 47, 20, and 22.
Explore the Electronics & Electricals category at EnvMart to find a wide range of high-quality semiconductors and RF components from trusted brands like Infineon.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum DC collector current of this model is 40 mA, allowing for efficient signal amplification in RF applications.
This transistor has a maximum collector emitter voltage rating of 4 V, making it suitable for low power RF amplification tasks.
It features a maximum transition frequency of 42 GHz, enabling high-frequency operation in wideband RF circuits.
The transistor exhibits a low noise figure, with NFmin levels of 0.5 dB at 1.9 GHz and 0.8 dB at 5.5 GHz, which helps maintain signal integrity.
This unit operates over a wide temperature range from -55°C to 150°C, ensuring reliable performance in harsh environments.
It comes in a leadless 4-pin Thin Small Outline Package (TSLP), facilitating surface mounting for compact PCB layouts.
The device complies with JEDEC standards 47, 20, and 22 for quality assurance in semiconductor manufacturing.
The minimum DC current gain (hFE) for this transistor is 160, which is essential for effective amplification.
This transistor is typically used in RF amplification, mixers, and oscillator circuits within wireless communications and instrumentation.
It has a maximum power dissipation rating of 160 mW, which is important for managing thermal performance in circuits.
The maximum emitter base voltage (VEBO) for this model is 1.2 V, which is a critical specification for its operation.
This model is an NPN transistor, which is commonly used in various electronic applications for signal amplification.
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