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Infineon 1200 V 18 A Silicon Carbide Schottky Switching Diode 2-Pin TO-252 Surface Mount IDM10G120C5XTMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.35mm |
| Length | 6.65mm |
| Model | IDM10G120C5XTMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | IDM10G120C5 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | J-STD20, JESD22 |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 18A |
| Peak Reverse Repetitive Voltage Vrrm | 1200V |
| Diode Configuration | Silicon Carbide Schottky Diode |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 320μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 99A |
| Maximum Forward Voltage Vf | 2.6V |
Key Features
- High voltage capability with 1200 V peak reverse repetitive voltage.
- Supports continuous forward current of up to 18 A for substantial load requirements.
- Low maximum forward voltage of 2.6 V to reduce conduction losses.
- Non-repetitive forward surge current capacity of 99 A to handle transient events.
- Minimal peak reverse current leakage of 320 μA to reduce standby losses.
- Wide operating temperature range from -55°C to 175°C for high-temperature applications.
- Surface mount package type TO-252 designed for compact assemblies.
- Silicon carbide Schottky diode technology ensures fast recovery and high efficiency.
Product Description
Infineon IDM10G120C5XTMA1 is a high-performance silicon carbide Schottky switching diode designed for industrial and power electronic applications requiring high voltage and high current capabilities. It features a peak reverse repetitive voltage of 1200 V and supports a continuous forward current of 18 A, making it suitable for demanding power conversion and protection tasks. This device is housed in a compact 2-pin TO-252 surface mount package, ideal for use in space-constrained assemblies.
This diode's low maximum forward voltage of 2.6 V enables reduced conduction losses and improved efficiency in switching applications. Its 99 A non-repetitive forward surge current rating provides robust transient tolerance under surge conditions. The diode maintains minimal peak reverse leakage current of 320 μA, minimizing standby power consumption.
With an extensive operating temperature range from -55°C to 175°C, the IDM10G120C5XTMA1 supports high-temperature environments common in industrial and automotive electronics. The device complies with J-STD-020 and JESD22 standards, ensuring compliance with industry reliability requirements.
Key industrial uses include power factor correction in converters, high-voltage DC link protection, fast switching in industrial power supplies, and transient suppression on high-current rails. Its silicon carbide technology offers superior switching speed and efficiency compared to conventional silicon diodes, enabling energy savings in power systems.
High-voltage switching diode suitable for industrial, HVAC, power management, and automotive sectors. Compact surface mount TO-252 package ideal for automated PCB assembly. Reliable operation across a broad temperature range facilitates use in extreme conditions.
Excellent surge capacity safeguards against transient inrush currents. Low leakage reduces energy losses for standby applications. Discover more semiconductor components from Infineon and explore our extensive catalog of switching diodes to find solutions tailored to your application needs at EnvMart.
Explore more products in our Schottky Diode category.
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Frequently Asked Questions
The Infineon IDM10G120C5XTMA1 has a peak reverse repetitive voltage of 1200 V.
This diode supports a maximum continuous forward current of 18 A.
The maximum forward voltage of this diode is 2.6 V.
The diode is housed in a compact 2-pin TO-252 surface mount package.
It operates over a wide temperature range from -55°C to 175°C.
The diode has a peak non-repetitive forward surge current rating of 99 A.
The dimensions are 6.65 mm in length, 6.22 mm in width, and 2.35 mm in height.
The peak reverse current leakage is minimal at 320 μA.
It complies with J-STD-020 and JESD22 standards.
The rectifier type of this model is a Schottky diode.
It is suitable for power factor correction, high-voltage DC link protection, and fast switching in industrial power supplies.
The diode configuration is a Silicon Carbide Schottky Diode.
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