onsemi Silicon Junction Switching Diode, Single, 300 mA, 75 V, Surface Mount SOD-123 MMSD4148T3G

onsemi MMSD4148T3G Silicon Junction Switching Diode is a high-quality single diode in a compact surface mount SOD-123 package designed for efficient switching in electronic circuits and semiconductor applications. It supports a maximum forward current of 300 mA and can withstand a peak reverse repetitive voltage of 75 V, making it suitable for general-purpose switching tasks.

This diode features a maximum power dissipation of 350 mW, which enables reliable operation under typical load conditions. Its low maximum forward voltage of 1 V delivers efficient current conduction with minimal loss. The device’s fast peak reverse recovery time of 4 ns supports applications requiring rapid switching speeds, making it ideal for consumer electronics, power supplies, and signal processing equipment.

The diode is designed for surface mount assembly on PCB boards and offers standard small dimensions of 2.84 mm length, 1.6 mm width, and 1.25 mm height. It is rated for operation in temperatures ranging from -55°C to 150°C, ensuring durability in a wide range of environments. This product is not automotive qualified and thus intended for standard industrial, laboratory, and commercial electronics projects.

The compact 2-pin SOD-123 package provides ease of integration in densely populated PCBs, optimizing space without compromising thermal management. The diode does not carry specific standards or certifications and should be selected accordingly for compliance requirements.

Typical uses include signal rectification, voltage protection, and switching roles across various industrial, electronic, communication, and consumer applications. It benefits designers seeking robust semiconductor switching components with predictable characteristics.

Single silicon junction diode for switching applications. Maximum forward current rated at 300 mA. Surface mount SOD-123 package with 2 pins. Maximum power dissipation of 350 mW ensuring reliability. Peak reverse repetitive voltage of 75 V for high voltage tolerance.

Maximum forward voltage of 1 V for efficient conduction. Peak reverse recovery time is 4 ns for high-speed switching. Wide operating temperature range from -55°C to 150°C. Compact dimensions: 2.84 mm length, 1.6 mm width, 1.25 mm height.

Designed for industrial and commercial electronic applications. Explore a broad range of Switching Diodes and semiconductor components on EnvMart for industrial electronics and power management solutions.