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Nexperia Small Signal NPN Transistor BC850C,215, 100 mA, 45 V, 3-Pin SOT-23

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 3mm
Model BC850C,215
Width 1.4mm
Mount Type Surface
Series BC850
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 420
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor supports a maximum DC collector current of 100 mA.
  • It has a maximum collector emitter voltage rating of 45 V suitable for moderate voltage applications.
  • The device is packaged in a compact 3-pin SOT-23 surface mount package.
  • The transistor features NPN polarity and a single transistor configuration.
  • Maximum power dissipation is 250 mW, ensuring low power loss operation.
  • The device operates within a temperature range of -65°C to 150°C for versatile environmental conditions.
  • It achieves a minimum DC current gain (hFE) of 420 for efficient amplification.
  • Its maximum transition frequency is 100 MHz, enabling high-speed switching performance.

Product Description

The Nexperia BC850C,215 is a high-performance small signal NPN bipolar transistor widely used in electronic circuits for amplification and switching.

This transistor supports a maximum DC collector current of 100 mA, making it suitable for low power signal applications. Its maximum collector-emitter voltage rating of 45 V provides adequate voltage headroom for common semiconductor tasks.

Packaged in a 3-pin SOT-23 surface mount package, the device allows compact, automated PCB assembly with excellent thermal dissipation capabilities. The NPN polarity and single transistor configuration make it an essential component in amplifier and switching circuits.

It features a maximum power dissipation of 250 mW, ensuring reliable operation with low thermal stress. Operating temperature ranges from -65°C up to 150°C, making it capable of enduring a wide range of industrial and commercial environments.

The minimum DC current gain (hFE) of 420 offers efficient signal amplification, while the 100 MHz maximum transition frequency supports high-speed switching applications. Additionally, the transistor complies with RoHS regulations and meets AEC-Q101 automotive standards, ensuring quality and safety for automotive electronics use.

Physical dimensions are compact, with a length of 3 mm, width of 1.4 mm, and height of 1.1 mm. This sizing supports efficient layout and design flexibility in densely populated PCB assemblies.

This transistor supports a maximum DC collector current of 100 mA. It has a maximum collector emitter voltage rating of 45 V suitable for moderate voltage applications. The device is packaged in a compact 3-pin SOT-23 surface mount package.

The transistor features NPN polarity and a single transistor configuration. Maximum power dissipation is 250 mW, ensuring low power loss operation. The device operates within a temperature range of -65°C to 150°C for versatile environmental conditions.

It achieves a minimum DC current gain (hFE) of 420 for efficient amplification. Its maximum transition frequency is 100 MHz, enabling high-speed switching performance. Complies with RoHS standards and meets automotive-grade AEC-Q101 requirements.

Dimensionally measuring 3 mm length, 1.4 mm width, and 1.1 mm height supports efficient PCB footprint usage.

This transistor is ideal for use in industrial electronic circuits, automotive systems, laboratory instrumentation, and manufacturing devices requiring reliable signal amplification and switching. Its compliance with quality and environmental standards ensures dependable performance across diverse applications.

Explore more Nexperia Bipolar Transistors and discrete semiconductor products and find comprehensive component solutions for your design and manufacturing needs at EnvMart.

Nexperia Small Signal NPN Transistor BC850C,215, 100 mA, 45 V, 3-Pin SOT-23
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Frequently Asked Questions

The maximum DC collector current for this transistor is 100 mA.

It has a maximum collector-emitter voltage rating of 45 V, a maximum collector-base voltage of 50 V, and a maximum emitter-base voltage of 5 V.

The BC850C,215 is packaged in a compact 3-pin SOT-23 surface mount package.

This model operates within a temperature range of -65°C to 150°C.

The minimum DC current gain (hFE) is 420, which allows for efficient signal amplification.

The maximum power dissipation for this transistor is 250 mW.

It has a maximum transition frequency of 100 MHz, enabling high-speed switching performance.

Yes, it complies with RoHS regulations and meets AEC-Q101 automotive standards.

The dimensions are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

This model features a single transistor configuration with NPN polarity.

It is suitable for use in industrial electronic circuits, automotive systems, laboratory instrumentation, and manufacturing devices requiring reliable signal amplification and switching.

The country of origin for this transistor is India.

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