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Microchip DN3135 N-Channel MOSFET, 135 mA, 350 V Depletion Mode, 3-Pin SOT-23 DN3135

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Microchip DN3135 N-Channel MOSFET, 135 mA, 350 V Depletion Mode, 3-Pin SOT-23 DN3135

Name: Microchip DN3135 N-Channel MOSFET, 135 mA, 350 V Depletion Mode, 3-Pin SOT-23 DN3135
Brand: Microchip
SKU: 279844
Price: 20.22 USD
Availability: InStock

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Category MOSFET Brand Microchip Condition New

Specifications

Country of Origin	India
Brand	Microchip
Height	1.02mm
Length	3.04mm
Model	DN3135
Width	1.4mm
Mount Type	Surface
Series	DN3135
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Standards/Approvals	Lead (Pb)-free/RoHS
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	135mA
Maximum Drain Source Voltage Vds	350V
Maximum Drain Source Resistance Rds	35Ω
Channel Mode	Depletion
Maximum Power Dissipation Pd	1.3W
Maximum Gate Source Voltage Vgs	-3.5V
Forward Voltage Vf	1.8V

Key Features

Utilizes advanced vertical DMOS structure for improved power handling.
Offers low threshold voltage and fast switching speeds suitable for switching and amplification.
Features high input impedance and low input capacitance for efficient operation.
Comes in a compact 3-pin SOT-23 surface mount package.
Has a maximum power dissipation of 1.3 W and operates from -55°C to 150°C.
Designed with depletion-type channel mode for normally-on operation.
Free from thermal runaway and secondary breakdown typical in bipolar transistors.
Lead (Pb)-free and RoHS compliant for environmental safety.

Product Description

Microchip DN3135 N-Channel MOSFET DN3135 is a low-threshold depletion-mode (normally-on) transistor that utilizes an advanced vertical DMOS structure and a proven silicon-gate manufacturing process. This design combines the power capabilities of bipolar transistors with the high input impedance and positive temperature coefficient inherent to MOS devices.

Characteristic of MOS structures, this device resists thermal runaway and thermally induced secondary breakdown, providing reliable performance in demanding industrial and electronic applications.

The transistor features a maximum continuous drain current of 135 mA and can withstand up to 350 V drain-source voltage. It operates with a maximum power dissipation of 1.3 W and functions within an operating temperature range from -55°C to 150°C.

The product package is a 3-pin SOT-23 surface mount type with compact dimensions (Length: 3.04 mm, Width: 1.4 mm, Height: 1.02 mm), suitable for modern PCB designs requiring space efficiency.

This depletion-mode MOSFET is ideally suited for applications requiring fast switching, low input capacitance, and high input impedance such as power switching, amplification, and electronic load control in industrial, laboratory, HVAC, and consumer electronics sectors.

Advanced vertical DMOS structure enables enhanced power handling. High input impedance and low capacitance facilitate efficient switching. Lead (Pb)-free and RoHS compliant ensuring environmental standards are met. Compact SOT-23 package supports automated surface mount assembly.

Wide operating temperature range suitable for harsh environments. Depletion-mode operation allows normally-on transistor function for specific circuit designs. Reliable thermal characteristics prevent secondary breakdown.

For technical design and integration, 3D models, footprints, and schematics are available, aiding PCB layout and assembly processes. Explore Microchip’s range of discrete semiconductors including MOSFETs for industrial and electronics applications on EnvMart.