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Wurth Elektronik 1-Element Uni-Directional TVS Diode 3 kW, 2-Pin DO-214 824550800
Specifications
| Country of Origin | China |
|---|---|
| Brand | Wurth Elektronik |
| Height | 2.34mm |
| Length | 6.86mm |
| Width | 5.9mm |
| Mount Type | Surface |
| Series | WE-TVSP |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-214 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Number of Elements per Chip | 1 |
| Clamping Voltage VC | 13.6V |
| Diode Configuration | Single |
| Direction Type | Uni-Directional |
| Minimum Breakdown Voltage Vbr | 9.36V |
| Peak Pulse Power Dissipation Pppm | 3kW |
| Test Current It | 1mA |
| Maximum Peak Pulse Current Ippm | 300A |
| Maximum Reverse Leakage Current | 50μA |
Key Features
- This TVS diode is unidirectional, designed to protect circuits from voltage transients.
- It features a minimum breakdown voltage of 9.36 V and a clamping voltage of 13.6 V.
- The diode supports a maximum peak pulse current of 300 A and has a test current of 1 mA.
- Its operating temperature range extends from -65°C up to 150°C.
- The compact surface mount package measures 6.86 mm in length, 5.9 mm in width, and 2.34 mm in height.
- The maximum reverse leakage current is 50 µA, ensuring low power loss during operation.
- Glass passivated junction ensures fast response time and device reliability.
- The diode contains a single element per chip and is part of the WE-TVSP series.
Product Description
Wurth Elektronik 824550800 1-Element Uni-Directional TVS Diode, rated at 3 kW peak pulse power, is designed for transient voltage suppression in sensitive electronic circuits. It is widely used in industrial, telecommunications, automotive, and power supply applications to protect components from voltage spikes and surges.
This diode features a unidirectional configuration with a minimum breakdown voltage of 9.36 V and a clamping voltage of 13.6 V, offering robust protection against transient events. Its maximum peak pulse current rating of 300 A and a test current of 1 mA ensure reliable operation under high-stress conditions.
The device is housed in a compact surface-mounted DO-214 package measuring 6.86 mm length, 5.9 mm width, and 2.34 mm height, making it suitable for space-constrained PCB layouts. It operates efficiently within a wide temperature range of -65°C to 150°C with a low maximum reverse leakage current of 50 µA, which reduces power consumption during normal operation.
The glass passivated junction provides fast response times crucial for transient suppression. Being part of the WE-TVSP series, it combines quality and consistency in manufacturing. This product is compliant with RoHS directives and is manufactured in China.
This TVS diode safeguards circuits from voltage surges with 3 kW peak pulse power capacity. Unidirectional design ensures precise voltage transient protection. Compact surface mount DO-214 package for efficient PCB integration.
Wide operating temperature range from -65°C to 150°C. Low maximum reverse leakage current of 50 µA ensures power efficiency. Glass passivated junction enables fast response and reliability. Single element per chip within the WE-TVSP series.
Manufactured in China with RoHS compliance.
This Wurth Elektronik TVS diode is ideal for protection in industrial electronics, power supply units, telecommunications equipment, and automotive systems. It meets the demanding requirements of modern electronic protection and supports secure and long-lasting operation of sensitive components.
Explore the comprehensive range of TVS Diodes and discrete semiconductors at EnvMart for reliable and certified industrial components.
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Frequently Asked Questions
The peak pulse power dissipation rating of this TVS diode is 3 kW.
The minimum breakdown voltage for this diode is 9.36 V.
The clamping voltage for this unit is 13.6 V.
It supports a maximum peak pulse current of 300 A.
The operating temperature range extends from -65°C to 150°C.
The dimensions of the DO-214 package are 6.86 mm in length, 5.9 mm in width, and 2.34 mm in height.
This diode features a unidirectional configuration with a single element per chip.
The maximum reverse leakage current is 50 µA.
The test current for this model is 1 mA.
This diode is part of the WE-TVSP series.
This product is manufactured in China.
It is suitable for protecting circuits in industrial, telecommunications, automotive, and power supply applications.
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