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STMicroelectronics 4 Darlington Transistor NPN 1.75A 50V 16-Pin Power DIP-16 ULN2064B
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 5.1mm |
| Length | 20mm |
| Model | ULN2064B |
| Width | 7.1mm |
| Mount Type | Through Hole |
| Series | ULN2064B |
| Maximum Operating Temperature | 85°C |
| Package Type | Power DIP-16 |
| Minimum Operating Temperature | -20°C |
| Pin Count | 16 |
| Maximum Continuous Collector Current Ic | 1.75A |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Number of Elements per Chip | 4 |
| Transistor Polarity | NPN |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.4V |
| Maximum Power Dissipation Pd | 4.3W |
Key Features
- Configured in a 16-pin Power DIP package suitable for through-hole mounting.
- Contains 4 Darlington transistor elements per chip with NPN transistor polarity.
- Maximum power dissipation rating of 4.3W for reliable operation.
- Collector-emitter saturation voltage maximum of 1.4V enhances switching efficiency.
- Operates within a temperature range of -20°C to 85°C.
- Standard dimensions of 20mm length, 7.1mm width, and 5.1mm height ensure compatibility with typical circuit boards.
- Integral suppression diodes included for inductive load protection.
- Logic-level inputs compatible with TTL or CMOS interfaces.
Product Description
STMicroelectronics ULN2064B is a 4 Darlington Transistor array featuring NPN transistors designed as power drivers for high-current and high-voltage switching applications. This component is housed in a 16-pin Power DIP package, supporting through-hole mounting suitable for various electronic assemblies.
Each chip integrates 4 Darlington pairs with a maximum continuous collector current of 1.75A and a maximum collector-emitter voltage of 50V, enabling it to handle demanding power levels with excellent efficiency.
The transistor array includes integral suppression diodes to protect circuits from inductive load spikes, making it highly suitable for relay, solenoid, and motor driver applications.
Key operational parameters include a maximum power dissipation of 4.3W and a low collector-emitter saturation voltage of 1.4V, promoting energy-efficient switching and minimal heat generation.
Designed to interface with standard logic levels, it supports TTL and CMOS inputs, simplifying integration in digital control environments. Configured in a 16-pin Power DIP package for through-hole mounting. Contains 4 Darlington NPN transistor elements per chip.
Maximum continuous collector current of 1.75A. Maximum collector-emitter voltage of 50V. Maximum power dissipation of 4.3W for safety and reliability. Integrated suppression diodes for inductive load protection. Operating temperature range from -20°C to 85°C allows use in various environments.
Standard dimensions (20 x 7.1 x 5.1 mm) fit typical PCB layouts.
This transistor array is widely used in electronic circuits requiring power switching, including industrial automation, motor controls, and various signal interface circuits in electronic manufacturing.
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Frequently Asked Questions
The maximum continuous collector current for this model is 1.75A.
The maximum collector-emitter voltage is 50V.
It has a maximum power dissipation rating of 4.3W.
The operating temperature range is from -20°C to 85°C.
The dimensions of this model are 20mm in length, 7.1mm in width, and 5.1mm in height.
There are 4 Darlington transistor elements per chip.
This model is housed in a 16-pin Power DIP package suitable for through-hole mounting.
Yes, it supports logic-level inputs compatible with TTL and CMOS interfaces.
Yes, it includes integral suppression diodes for inductive load protection.
The maximum collector-emitter saturation voltage is 1.4V.
It is suitable for high-current and high-voltage switching applications, including relay, solenoid, and motor driver circuits.
The country of origin for this model is India.
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