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onsemi Switching Diode, Single Silicon Junction, 1 A Forward Current, 200 V Peak Reverse Voltage, DO-214BA Package GF1D

Category Switching Diode Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.7mm
Length 4.7mm
Model GF1D
Width 2.9mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type DO-214BA
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Power Dissipation Pd 1.8W
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 1.1V
Peak Reverse Recovery Time trr 2μs
Maximum Forward Current If 1A
Maximum Peak Reverse Repetitive Voltage Vrrm 200V

Key Features

  • Supports maximum forward current of 1 ampere for reliable circuitry protection.
  • Surface mount construction with DO-214BA package for efficient PCB integration.
  • Silicon junction type ensures stable switching performance.
  • Peak reverse voltage of 200 volts suitable for various semiconductor applications.
  • Fast peak reverse recovery time of 2 microseconds enhances switching speed.
  • Maximum power dissipation capability of 1.8 watts for robust handling of power.
  • Operating temperature range from -65°C to 175°C accommodates diverse environment conditions.
  • Compact dimensions of 4.7 mm length, 2.9 mm width, and 2.7 mm height aid space-saving designs.

Product Description

onsemi GF1D is a single switching diode designed as a silicon junction semiconductor device, optimized for switching applications where 1 ampere forward current and 200 volts peak reverse voltage are required. Its DO-214BA surface mount package offers a compact and efficient footprint for integration into printed circuit boards.

This diode features a fast peak reverse recovery time of 2 microseconds, ensuring quick response to voltage changes, making it suitable for use in power supply circuits, switching regulators, and other semiconductor devices where switching speed and reliability are important.

With a maximum power dissipation rating of 1.8 watts and ability to endure peak non-repetitive forward surge currents of up to 30 A, the GF1D diode is robust, able to handle transient electrical conditions encountered in industrial and electronic designs.

Operating reliably within a temperature range from -65°C to 175°C, it supports harsh environments common in industrial and commercial electronics. Its compact physical dimensions (4.7 mm length, 2.9 mm width, 2.7 mm height) aid designers in creating space-efficient circuits.

This product is suitable for applications in industrial and electronic component manufacturing, power and connector assemblies, and discrete semiconductor switching diode uses, providing trusted performance by onsemi.

Supports maximum forward current of 1 ampere for reliable circuitry protection. Surface mount construction with DO-214BA package for efficient PCB integration. Silicon junction type ensures stable switching performance. Peak reverse voltage of 200 volts suitable for various semiconductor applications.

Fast peak reverse recovery time of 2 microseconds enhances switching speed. Maximum power dissipation capability of 1.8 watts for robust handling of power. Operating temperature range from -65°C to 175°C accommodates diverse environment conditions.

Compact dimensions of 4.7 mm length, 2.9 mm width, and 2.7 mm height aid space-saving designs. Rated peak non-repetitive forward surge current of 30 A for transient events. No automotive standard compliance, targeted for general electronics and industrial use.

Explore more semiconductor Switching Diodes and discrete components at EnvMart for diverse industrial, manufacturing, and electronics design needs.

onsemi Switching Diode, Single Silicon Junction, 1 A Forward Current, 200 V Peak Reverse Voltage, DO-214BA Package GF1D
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Frequently Asked Questions

The maximum forward current for this diode is 1 ampere, providing reliable circuitry protection.

The GF1D has a peak reverse voltage rating of 200 volts, making it suitable for various semiconductor applications.

This model uses a DO-214BA surface mount package, which allows for efficient integration into printed circuit boards.

The maximum power dissipation capability of the GF1D is 1.8 watts, allowing it to handle robust power conditions.

The operating temperature range for this diode is from -65°C to 175°C, accommodating diverse environmental conditions.

The diode can endure a peak non-repetitive forward surge current of up to 30 A, suitable for transient electrical conditions.

The peak reverse recovery time of this diode is 2 microseconds, enhancing its switching speed.

The dimensions of the GF1D are 4.7 mm in length, 2.9 mm in width, and 2.7 mm in height, aiding in space-saving designs.

This diode features a single diode configuration, optimized for switching applications.

The maximum forward voltage drop for the GF1D is 1.1 volts.

The country of origin for this diode is India.

This diode is suitable for applications in industrial and electronic component manufacturing, power and connector assemblies, and discrete semiconductor uses.

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