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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.7mm |
| Length | 4.7mm |
| Model | GF1D |
| Width | 2.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-214BA |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Maximum Power Dissipation Pd | 1.8W |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A |
| Maximum Forward Voltage Vf | 1.1V |
| Peak Reverse Recovery Time trr | 2μs |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 200V |
onsemi GF1D is a single switching diode designed as a silicon junction semiconductor device, optimized for switching applications where 1 ampere forward current and 200 volts peak reverse voltage are required. Its DO-214BA surface mount package offers a compact and efficient footprint for integration into printed circuit boards.
This diode features a fast peak reverse recovery time of 2 microseconds, ensuring quick response to voltage changes, making it suitable for use in power supply circuits, switching regulators, and other semiconductor devices where switching speed and reliability are important.
With a maximum power dissipation rating of 1.8 watts and ability to endure peak non-repetitive forward surge currents of up to 30 A, the GF1D diode is robust, able to handle transient electrical conditions encountered in industrial and electronic designs.
Operating reliably within a temperature range from -65°C to 175°C, it supports harsh environments common in industrial and commercial electronics. Its compact physical dimensions (4.7 mm length, 2.9 mm width, 2.7 mm height) aid designers in creating space-efficient circuits.
This product is suitable for applications in industrial and electronic component manufacturing, power and connector assemblies, and discrete semiconductor switching diode uses, providing trusted performance by onsemi.
Supports maximum forward current of 1 ampere for reliable circuitry protection. Surface mount construction with DO-214BA package for efficient PCB integration. Silicon junction type ensures stable switching performance. Peak reverse voltage of 200 volts suitable for various semiconductor applications.
Fast peak reverse recovery time of 2 microseconds enhances switching speed. Maximum power dissipation capability of 1.8 watts for robust handling of power. Operating temperature range from -65°C to 175°C accommodates diverse environment conditions.
Compact dimensions of 4.7 mm length, 2.9 mm width, and 2.7 mm height aid space-saving designs. Rated peak non-repetitive forward surge current of 30 A for transient events. No automotive standard compliance, targeted for general electronics and industrial use.
Explore more semiconductor Switching Diodes and discrete components at EnvMart for diverse industrial, manufacturing, and electronics design needs.
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