Infineon SiGe RF NPN Bipolar Transistor 25 mA 13 V 4-Pin SOT-343 BFP720H6327XTSA1

Infineon BFP720H6327XTSA1 SiGe RF bipolar transistor is a high-performance NPN transistor housed in a compact 4-pin SOT-343 surface mount package measuring 2 mm length, 2.1 mm width, and 0.9 mm height. It is designed for ultra-low noise and wideband operation suitable for RF amplification in mobile and communication electronics.

This device supports a maximum DC collector current of 25 mA and withstands a maximum collector emitter voltage of 13 V with a maximum collector base voltage of 13 V. It dissipates a power of up to 100 mW and can operate at temperatures up to 150°C, making it reliable for demanding industrial and commercial electronics environments.

Featuring a typical transition frequency of 45 GHz, the BFP720H6327XTSA1 provides excellent gain performance at high frequencies. The internal circuitry includes protection against electrostatic discharge (ESD) and excessive RF input power, enhancing device robustness.

The transistor polarity is NPN with a single transistor configuration, and it has a minimum DC current gain (hFE) of 160. Its maximum emitter base voltage is 1.2 V and the device uses surface mount technology (SMT) for efficient PCB integration.

This transistor is ideal for industrial RF applications, mobile communication systems, RF switching, and low noise amplification where power efficiency and signal integrity are critical. Typical use cases include telecommunications equipment, broadband amplifiers, and sensor interfaces.

Ultra-low-noise wideband NPN bipolar RF transistor optimized for mobile applications. Maximum power dissipation of 100 mW supports efficient thermal management. Small 4-pin SOT-343 surface mount package with compact dimensions (2 mm × 2.1 mm × 0.9 mm).

Typical transition frequency up to 45 GHz enabling high-frequency amplification. Internal protection circuitry for ESD and excessive RF input power. Operating temperature up to 150°C allows for robust performance in harsh conditions.

Minimum DC current gain (hFE) of 160 ensures reliable signal amplification. Single transistor configuration with NPN polarity. Ideal for applications requiring low power consumption and high gain RF switching and amplification.

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