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Infineon SiGe RF Bipolar NPN Transistor 25 mA 13 V 100 mW 4-Pin SOT-343 BFP720H6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 0.9mm |
| Length | 2mm |
| Model | BFP720H6327XTSA1 |
| Width | 2.1mm |
| Mount Type | Surface |
| Series | BFP720 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-343 |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 13V |
| Minimum DC Current Gain hFE | 160 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 1.2V |
| Maximum Collector Base Voltage VCBO | 13V |
| Maximum Power Dissipation Pd | 100mW |
| Maximum DC Collector Current Idc | 25mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 45GHz |
Key Features
- Designed for mobile applications requiring low power consumption and high frequency operation.
- Typical transition frequency of 45 GHz supporting high gain amplifiers up to 10 GHz.
- Includes internal protection circuitry for electrostatic discharge and excessive RF input power.
- Compact 4-pin SOT-343 surface mount package with dimensions 2 mm x 2.1 mm x 0.9 mm.
- Maximum operating temperature up to 150°C ensures reliability in demanding environments.
- Transistor polarity is NPN with a minimum DC current gain (hFE) of 160 for efficient amplification.
Product Description
Infineon BFP720H6327XTSA1 is a silicon germanium (SiGe) RF bipolar NPN transistor optimized for ultra-low noise and wideband RF applications. It supports a maximum DC collector current of 25 mA and a maximum collector-emitter voltage of 13 V. The device dissipates up to 100 mW and comes in a compact 4-Pin SOT-343 surface mount package measuring 2 mm in length, 2.1 mm in width, and 0.9 mm in height.
This transistor operates reliably at temperatures up to 150°C and features a maximum transition frequency (ft) of 45 GHz, making it ideal for use in mobile communication and RF amplifier circuits requiring low power consumption and high gain at frequencies up to 10 GHz. Internal electrostatic discharge (ESD) and RF input power protection circuits enhance device robustness.
The BFP720 series from Infineon uses advanced SiGe:C technology to achieve excellent noise performance and gain, supporting modern wireless and communication industry requirements. Its NPN configuration and minimum DC current gain (hFE) of 160 deliver efficient signal amplification.
The transistor is surface mount type for PCB assembly with a 4-pin pin count, simplifying integration into compact electronic designs.
This product is suited for industrial, telecommunications, and RF electronics manufacturing use cases, enhancing signal quality in various semiconductor and RF circuit applications.
Utilizes SiGe:C material technology for ultra-low noise and high gain. Supports operation up to 150°C with stable performance. Packages in compact SOT-343 surface mount 4-pin configuration for modern PCB applications. Designed for mobile and RF amplification applications requiring up to 45 GHz transition frequency.
Includes built-in protection against ESD and excessive RF input power for enhanced durability. Explore the electronics category for more advanced discrete semiconductor components and bipolar transistor options to fulfill your industrial and electronic design needs.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum collector-emitter voltage (Vceo) for this transistor is 13 V.
This model has a maximum transition frequency (ft) of 45 GHz, making it suitable for high-frequency applications.
The maximum power dissipation for this NPN transistor is 100 mW.
The minimum DC current gain (hFE) for this model is 160, which supports efficient amplification.
The SOT-343 package measures 2 mm in length, 2.1 mm in width, and 0.9 mm in height.
This transistor can operate reliably at temperatures up to 150°C.
It is designed for surface mounting, suitable for PCB assembly.
The maximum DC collector current for this model is 25 mA.
This transistor is suited for mobile communication and RF amplifier circuits requiring low power consumption and high gain.
Yes, it includes internal protection circuitry for electrostatic discharge (ESD) and excessive RF input power.
The transistor configuration is NPN, designed for efficient signal amplification.
It utilizes SiGe:C technology to achieve excellent noise performance and gain.
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