ROHM 2-Element Bi-Directional ESD Protection Diode 100 W Power Dissipation 3-Pin SOT-23 Package ESD16VHYFHT116

The ROHM ESD16VHYFHT116 is a 2-element bi-directional ESD Protection Diode engineered for robust electrostatic discharge protection in electronic devices. Packaged in a surface-mount 3-pin SOT-23 form factor, this diode provides a peak pulse power dissipation of 100 W, making it suitable for applications requiring superior transient voltage suppression.

With a maximum reverse stand-off voltage of 12 V and clamping voltage also at 12 V, it ensures voltage spikes are effectively limited to safeguard sensitive circuitry. The device supports operation in a wide temperature range from -55°C to 150°C, ensuring reliability under harsh environmental conditions.

This diode meets the automotive-grade AEC-Q101 qualification, guaranteeing its robustness for automotive and industrial applications. Featuring a low reverse leakage current of 100 nA, the ESD16VHYFHT116 minimizes leakage-induced power loss, contributing to energy-efficient designs.

Key technical attributes include a minimum breakdown voltage of 17.64 V, 1 mA test current, and a bi-directional direction type for versatile protection requirements. The device comprises two elements per chip, enhancing surge absorption capability.

Its compact SOT-23 package facilitates easy surface mounting, saving PCB space and simplifying assembly processes. These characteristics make the ROHM ESD16VHYFHT116 ideal for protecting electronic components in telecommunications, automotive electronics, computing devices, and other industrial equipment.

Supports bi-directional ESD protection suitable for sensitive electronic devices. Feature a peak pulse power dissipation of 100 W for superior transient suppression. Compact surface-mount 3-pin SOT-23 package optimizes space in PCB designs.

Clamping voltage of 12 V to limit voltage spikes and protect circuits. Operates reliably between -55°C and 150°C for broad temperature range applications. Complies with AEC-Q101 automotive standard ensuring high reliability.

Low maximum reverse leakage current of 100 nA minimizes power loss in circuits. Minimum breakdown voltage of 17.64 V for stable operation during transient events. Designed with 2 elements per chip in a bidirectional configuration for versatile protection.

Suitable for industrial, automotive, telecommunications, and electronics manufacturing applications, this diode offers reliable ESD protection to enhance device longevity and performance. Browse more ROHM semiconductor protection components for diverse electronics needs at EnvMart.