$23.16
$20.22
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Microchip Type P-Channel Enhancement Mode MOSFET, 250 mA, 60 V, 3-Pin TO-92 VP2106N3-G
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Height | 5.33mm |
| Length | 5.08mm |
| Model | VP2106N3-G |
| Width | 4.06mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 250mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 15Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Designed for switching and amplifying applications requiring low threshold voltage and high breakdown voltage.
- Features a maximum continuous drain current of 250 mA and maximum drain-source voltage of 60 V.
- Enhancement mode channel with low input capacitance and fast switching speeds.
- Rated maximum power dissipation of 1 W with operating temperatures from -55 to 150°C.
- Compact TO-92 through-hole package with 3 pins for easy mounting.
- Maximum drain-source resistance is 15 ohms ensuring efficient conductivity.
- Supports gate-source voltage range from -20 V to +20 V.
- Forward voltage of -1.2 V enhances switching efficiency.
Product Description
Microchip VP2106N3-G is a P-Channel Enhancement Mode MOSFET transistor designed for reliable switching and amplifying functions in electronic circuits. This device supports a maximum continuous drain current of 250 mA and withstands a maximum drain-source voltage of 60 V, making it ideal for low power applications.
The transistor is manufactured in a compact TO-92 package with three pins, which supports through-hole mounting for easy integration into PCB designs. Operating temperature range from -55°C to 150°C enables stable performance in harsh environmental conditions.
Key electrical characteristics include a maximum power dissipation of 1 watt, maximum drain-source resistance of 15 ohms, and gate-source voltage limits of -20 V to +20 V, suitable for various control and signal amplification circuits.
The device features a low threshold voltage, high input impedance, and very fast switching speeds, making it suitable for industrial, automotive, and consumer electronics applications.
Designed for switching and amplifying applications requiring low threshold voltage and high breakdown voltage. Maximum continuous drain current of 250 mA and maximum drain-source voltage of 60 V. Enhancement mode channel with low input capacitance and fast switching speeds.
Rated maximum power dissipation of 1 W with operating temperatures from -55 to 150°C. Compact TO-92 through-hole package with 3 pins for easy mounting. Maximum drain-source resistance is 15 ohms ensuring efficient conductivity.
Supports gate-source voltage range from -20 V to +20 V. Forward voltage of -1.2 V enhances switching efficiency. Compact dimensions: height 5.33 mm, length 5.08 mm, width 4.06 mm. This MOSFET is widely used in industrial, laboratory, automotive, and consumer electronic devices for power control, switching, and signal amplification.
Explore our Electronics & Electricals catalog for more semiconductor components and MOSFET variants by leading manufacturers like Microchip, ensuring quality and reliability for your designs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 250 mA.
The maximum drain-source voltage for this MOSFET is 60 V.
It operates within a temperature range of -55°C to 150°C.
This model is packaged in a compact TO-92 through-hole package.
The rated maximum power dissipation is 1 W.
It supports a gate-source voltage range from -20 V to +20 V.
The maximum drain-source resistance is 15 ohms.
The dimensions are height 5.33 mm, length 5.08 mm, and width 4.06 mm.
This model features a P-Channel enhancement mode.
The forward voltage is -1.2 V, which enhances switching efficiency.
It has a total of 3 pins for connection.
The country of origin for this model is India.
Related Products
Other Products from this brand
$2.75
$2.67
-3%
New
Recently Viewed Products
$23.16
$20.22
Save 12.7%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent